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Semiconductor device including a diode at least partly arranged in a trench

  • US 9,947,648 B2
  • Filed: 06/22/2016
  • Issued: 04/17/2018
  • Est. Priority Date: 12/16/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor body including a first trench extending into the semiconductor body from a first surface of the semiconductor body;

    a diode including an anode region and a cathode region, wherein one of the anode region and the cathode region is at least partly arranged in the first trench, wherein the other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a pn-junction in the semiconductor body and extending to the first surface; and

    a conducting path of the diode through a sidewall of the first trench, and wherein the pn-junction extends along at least 50% of a depth of the first trench.

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