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Semiconductor device and a method for fabricating the same

  • US 9,947,657 B2
  • Filed: 04/04/2016
  • Issued: 04/17/2018
  • Est. Priority Date: 01/29/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device including a fin field effect transistor, comprising:

  • a first gate electrode disposed between gate sidewall spacers made of an insulating material;

    a first source/drain (S/D) region disposed adjacent to the first gate electrode;

    a first S/D contact made of a conductive material and disposed on the first S/D region, the S/D contact being not in direct contact with the first gate electrode;

    a first spacer layer made of an insulating material and disposed between one of the gate sidewall spacers and the first S/D contact;

    a first contact layer made of a conductive material and being in direct contact with the first gate electrode and an uppermost portion and a side face of the first S/D contact; and

    a first wiring layer integrally formed with the first contact layer, wherein;

    there is no interface between the first contact layer and the first wiring layer in a cross sectional view, andthe first contact layer has a smaller area than the first wiring layer in plan view.

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