Semiconductor device and method of manufacturing the same

• US 9,947,751 B2
• Filed: 03/02/2017
• Issued: 04/17/2018
• Est. Priority Date: 09/16/2016
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kobayashi, Kenya, Matsuda, Tetsuo, Himori, Yosuke, Nishiguchi, Toshifumi
• Primary Examiner(s): Ahmadi, Mohsen
• Application Number:
  US15/448,126
• Publication Number:
  US 20180083110A1
• Time in Patent Office: 411 Days
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/401 Multistep manufacturing processes
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on the first semiconductor region, a third semiconductor region of the first conductivity type provided on the second semiconductor region, a first insulating part provided in the first semiconductor region, a first electrode provided in the first semiconductor region, the first insulating part disposed between the first electrode and the first semiconductor region, a second insulating part provided on the first electrode, a gate electrode provided on the second insulating part, a gate insulating part provided between the gate electrode and the second semiconductor region, and a second electrode provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first electrode.

Claims

1. A semiconductor device, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type that is provided on the first semiconductor region;

a third semiconductor region of the first conductivity type that is provided on the second semiconductor region;

a first insulating part that is provided in the first semiconductor region;

a first electrode that is provided in the first semiconductor region, the first insulating part disposed between the first electrode and the first semiconductor region;

a second insulating part that is provided on the first electrode;

a gate electrode that is provided on the second insulating part;

a gate insulating part that is provided between the gate electrode and the second semiconductor region; and

a second electrode is provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first semiconductor region;

wherein;

the gate electrode has;

a lower surface indented upward, defining a first recess and a second recess, and

a first side surface that faces the second semiconductor region in a first direction via the gate insulating part,

the first recess is positioned between the second recess and the first side surface in the first direction,

a distance in the first direction between the first recess and the second recess is longer than a distance in the first direction between the first side surface and the first recess, and

the second insulating part includes;

a first insulating portion,

a second insulating portion that is provided between the gate electrode and the first insulating portion, contains boron in a higher concentration than a boron concentration of the first insulating portion, and includes a first projection and a second projection that protrude upward, the first projection provided in the first recess and the second projection provided in the second recess.

2. The semiconductor device according to claim 1,

wherein the first electrode has an upper surface, a second side surface, and a third side surface on a side opposite to the second side surface,

a first corner between the upper surface and the second side surface is in line with the first recess in a second direction, and

a second corner between the upper surface and the third side surface is in line with the second recess in the second direction.

3. The semiconductor device according to claim 2,

wherein the second insulating portion has a dielectric constant higher than a dielectric constant of the first insulating portion.

4. The semiconductor device according to claim 1,

wherein the second insulating portion has a dielectric constant higher than a dielectric constant of the first insulating portion.

5. A semiconductor device, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type that is provided on the first semiconductor region;

a third semiconductor region of the first conductivity type that is provided on the second semiconductor region;

a first insulating part that is provided in the first semiconducting region;

a first electrode that is provided in the first semiconductor region having a side surface, the first insulating part disposed between the first electrode and the first semiconducting region;

a second insulating part that is provided on the first electrode;

a gate electrode that has a lower surface which defines a recess indented upward, provided on the second insulating part;

a gate insulating part that is provided between the gate electrode and the second semiconductor region; and

a second electrode is provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first semiconductor region;

wherein;

the gate electrode faces the second semiconductor region in a first direction via the gate insulating part,

the recess is in line with a corner between an upper surface of the first electrode and the side surface of the first electrode in a vertical direction, and

the second insulating part includes;

a first insulating portion, and

a second insulating portion that is provided between the gate electrode and the first insulating portion, has a dielectric constant higher than a dielectric constant of the first insulating portion, wherein the second insulating portion includes a projection that protrudes upward, the projection is provided in the recess.

6. The semiconductor device according to claim 5,

wherein the second insulating portion contains boron in a higher concentration than a boron concentration of the first insulating portion.