Display device, array substrate, and thin film transistor
First Claim
Patent Images
1. A method for manufacturing the thin film transistor, comprising:
- sequentially forming an active layer, a gate insulating layer and a gate on a base substrate;
wherein the active layer is an oxide semiconductor, and the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, andwherein forming of the gate insulating layer comprises;
forming the second gate insulating layer without annealing on the active layer;
forming the first gate insulating layer on the second gate insulating layer; and
performing an annealing process on the first gate insulating layer; and
the annealing process comprises;
the first gate insulating layer being dehydrogenized with a high temperature annealing furnace,the annealing process being carried out under the protection of nitrogen gas, vacuum, or rare gas, in which annealing temperature is 250°
C.˜
450°
C. and annealing time is 20 min˜
150 min.
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Abstract
A method for manufacturing the thin film transistor, including: forming a gate, an active layer and a gate insulating layer disposed between the gate and the active layer; wherein the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and one of the first gate insulating layer and the second gate insulating layer is annealed.
27 Citations
9 Claims
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1. A method for manufacturing the thin film transistor, comprising:
-
sequentially forming an active layer, a gate insulating layer and a gate on a base substrate; wherein the active layer is an oxide semiconductor, and the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and wherein forming of the gate insulating layer comprises; forming the second gate insulating layer without annealing on the active layer; forming the first gate insulating layer on the second gate insulating layer; and performing an annealing process on the first gate insulating layer; and the annealing process comprises; the first gate insulating layer being dehydrogenized with a high temperature annealing furnace, the annealing process being carried out under the protection of nitrogen gas, vacuum, or rare gas, in which annealing temperature is 250°
C.˜
450°
C. and annealing time is 20 min˜
150 min. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing the thin film transistor, comprising:
-
sequentially forming an active layer, a gate insulating layer and a gate on a base substrate; wherein the active layer is an oxide semiconductor, and the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and wherein forming of the gate insulating layer comprises; forming the second gate insulating layer without annealing on the active layer; forming the first gate insulating layer on the second gate insulating layer; and performing an annealing process on the first gate insulating layer, and wherein the annealing process comprises; within a vacuum heating chamber being incorporated into a plasma enhanced chemical vapor deposition (PECVD) apparatus for sequentially forming the active layer, the gate insulating layer and the gate, in which the pressure is 10−
4 Pa˜
1 Pa,a dehydrogenizing process being performed on the first gate insulating layer, in which the temperature of the vacuum heating chamber is 350°
C.˜
480°
C., and an annealing time period is 10 min˜
30 min.
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Specification