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Self-aligned trench MOSFET and method of manufacture

  • US 9,947,770 B2
  • Filed: 01/17/2008
  • Issued: 04/17/2018
  • Est. Priority Date: 04/03/2007
  • Status: Active Grant
First Claim
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1. A trench metal-oxide-semiconductor field effect transistor (MOSFET) comprising:

  • a drain region;

    a plurality of gate regions disposed in a plurality of trenches above the drain region;

    a plurality of gate insulator regions, wherein each of the plurality of gate insulator regions are disposed about a periphery of a respective one of the plurality of gate regions;

    a plurality of field insulator regions, wherein each of the plurality of field insulator regions are disposed in a respective one of the plurality of trenches above a respective one of the plurality of gate regions;

    a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, wherein the recessed mesas are aligned to the plurality of field insulator regions disposed in the plurality of trenches;

    a plurality of body regions disposed in the recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region;

    a plurality of body contact regions disposed in each body region adjacent the plurality of source regions;

    a plurality of source/body contact spacers disposed between the plurality of gate insulator regions above the recessed mesas, wherein the plurality of body contact regions are aligned to the plurality of source body contact spacers; and

    a plurality of source/body contact plugs disposed between the source/body contact spacers and coupling the plurality of body contact regions to the plurality of source regions.

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