Semiconductor device and method for fabricating the same

• US 9,947,792 B2
• Filed: 05/05/2015
• Issued: 04/17/2018
• Est. Priority Date: 04/07/2015
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Feng, Li-Wei, Tsai, Shih-Hung, Lin, Chao-Hung, Hsu, Chih-Kai, Hung, Yu-Hsiang, Jenq, Jyh-Shyang
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): RAHMAN, MOIN M
• Application Number:
  US14/703,904
• Publication Number:
  US 20160300942A1
• Time in Patent Office: 1,078 Days
• Field of Search: 257 20, 257194, 257135-136, 257213-413, 257900, 257902-903, 438136, 438137, 438455-458, 438149-165, 438173, 438192, 438206, 438212, 438424, 438427, 438428, 438591
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66803 with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, in which the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.

Claims

1. A semiconductor device, comprising:

a substrate having a metal oxide semiconductor (MOS) region defined thereon and the MOS region comprises a first conductive type;

a fin-shaped structure having a top portion and a bottom portion on the substrate, wherein the top portion and the bottom portion comprise same material; and

a first doped region adjacent to one side of the fin-shaped structure in the bottom portion and a second doped region adjacent to another side of the fin-shaped structure in the bottom portion, wherein the first doped region and the second doped region comprise a second conductive type and an edge of the first doped region and an edge of the second doped region together constitute a V-shaped profile, and the first doped region and the second doped region both extend to and directly contact a slanted sidewall of the bottom portion of the fin-shaped structure.

2. The semiconductor device of claim 1, wherein the doped region comprises boron or phosphorus.