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Semiconductor device and method for fabricating the same

  • US 9,947,792 B2
  • Filed: 05/05/2015
  • Issued: 04/17/2018
  • Est. Priority Date: 04/07/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate having a metal oxide semiconductor (MOS) region defined thereon and the MOS region comprises a first conductive type;

    a fin-shaped structure having a top portion and a bottom portion on the substrate, wherein the top portion and the bottom portion comprise same material; and

    a first doped region adjacent to one side of the fin-shaped structure in the bottom portion and a second doped region adjacent to another side of the fin-shaped structure in the bottom portion, wherein the first doped region and the second doped region comprise a second conductive type and an edge of the first doped region and an edge of the second doped region together constitute a V-shaped profile, and the first doped region and the second doped region both extend to and directly contact a slanted sidewall of the bottom portion of the fin-shaped structure.

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