Group-IV solar cell structure using group-IV or III-V heterostructures
First Claim
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1. A photovoltaic cell comprising:
- a first layer comprising an n-type group IV primary photogeneration layer, the first layer having a first major surface and a second major surface opposite the first major surface;
a second layer comprising a p-type group III-V layer; and
a third layer comprising an n-type group III-V layer;
wherein the second layer directly contacts the first major surface of the first layer and the third layer directly contacts the second major surface of the first layer;
wherein the first layer forms a photoactive p-n heterojunction with the second layer; and
wherein the first layer is an epitaxial layer grown on the second layer.
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Abstract
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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Citations
7 Claims
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1. A photovoltaic cell comprising:
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a first layer comprising an n-type group IV primary photogeneration layer, the first layer having a first major surface and a second major surface opposite the first major surface; a second layer comprising a p-type group III-V layer; and a third layer comprising an n-type group III-V layer; wherein the second layer directly contacts the first major surface of the first layer and the third layer directly contacts the second major surface of the first layer; wherein the first layer forms a photoactive p-n heterojunction with the second layer; and wherein the first layer is an epitaxial layer grown on the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification