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Methods and structures of integrated MEMS-CMOS devices

  • US 9,950,924 B2
  • Filed: 12/30/2015
  • Issued: 04/24/2018
  • Est. Priority Date: 03/09/2012
  • Status: Active Grant
First Claim
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1. A method for fabricating an integrated MEMS-CMOS device comprising:

  • providing a substrate having a surface region;

    forming a CMOS IC layer overlying the surface region, the CMOS IC layer having at least one CMOS electrode coupled to an ESD diode;

    forming a mechanical structural layer overlying the CMOS IC layer;

    forming at least one MEMS device overlying the CMOS IC layer from a first portion of the mechanical structural layer, the at least one MEMS devices having at least one MEMS electrode;

    forming a protection structure from a second portion of the mechanical structural layer, the protection structure including one or more ground posts and a jumper, wherein the protection structure is coupled to the at least one MEMS electrode and the at least one CMOS electrode through the jumper, wherein the protection structure is configured to couple the CMOS electrode to electrical ground through the one or more ground posts; and

    etching the mechanical structural layer to separate the one or more ground posts from the jumper, wherein the CMOS electrode is connected to the electrical ground until the mechanical structural layer is completely etched.

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