High resolution, high frame rate, low power image sensor

• US 9,952,323 B2
• Filed: 04/07/2015
• Issued: 04/24/2018
• Est. Priority Date: 04/07/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Deane, Peter
• Primary Examiner(s): ADAMS, EILEEN M
• Application Number:
  US14/680,906
• Publication Number:
  US 20150285625A1
• Time in Patent Office: 1,113 Days
• Field of Search: None
• CPC Class Codes: G01S 17/10 using transmission of interrupted, pulse-modulated waves determination of distance by phase measurements G01S17/32
• CPC Class Codes: G01S 17/42 Simultaneous measurement of distance and other co-ordinates indirect measurement G01S17/46
• CPC Class Codes: G01S 17/48 Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 7/4816 of receivers alone
• CPC Class Codes: G01S 7/4817 relating to scanning
• CPC Class Codes: G01S 7/4863 Detector arrays, e.g. charge-transfer gates
• CPC Class Codes: H04N 23/56 provided with illuminating means
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 25/773 comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Abstract

An apparatus and method for determining a distance to an object using a binary, event-based image sensor. In one aspect, the image sensor includes memory circuitry and address decode circuitry. In one aspect, activation of a photodiode of the image sensor array by receipt of one or more photons is able to be used directly as an input to logic circuitry. In one embodiment, the image sensor includes photodiodes operating in an avalanche photodiode mode or Geiger mode. In one embodiment, the imaging sensor includes photodiodes operating as thresholded integrating pixels. The imaging sensor can be fabricated from one or more substrates having at least a first and a second voltage portion.

Claims

1. A method of detecting an optical event, the method comprising:

interrogating an object with a photonic interrogation beam;

activating an array of pixels substantially concurrent with activation of the photonic interrogation beam, the pixels comprising avalanche photodiodes, a voltage bias level of avalanche photodiodes corresponding to pixel operation in one of Geiger mode and avalanche mode, wherein the array of pixels comprises a plurality of subsets;

receiving a reflected beam from the interrogating the object, at the array;

generating a signal corresponding to a location of incidence of the reflected beam on the array, the signal corresponding to at least one of a pixel array address and a time-of-flight (TOF) of the photonic interrogation beam and the reflected beam, wherein the generating the signal is based on the receiving the reflected beam by a pixel comprised by an active subset of the plurality of subsets, and wherein any detection of the reflected beam by a remainder of pixels comprised by the active subset is not included in the signal; and

determining a distance to the object based upon the signal.

2. The method according to claim 1, wherein the interrogating is performed at a controlled angle of the photonic interrogation beam, and further wherein an interrogation source emitting the interrogation beam, and the array, are disposed at a controlled distance from each other, and wherein the determining the distance is based on triangulating the controlled angle, the controlled distance, and an angle of incidence determined by the pixel array address of the reflected beam.

3. The method according to claim 2, wherein the activating the array comprises shuttering, wherein shuttering comprises activating the plurality of subsets of the array in a time-varying manner, wherein a subset activation period for each subset of the plurality of subsets is based upon a value of the controlled angle and a rate at which the controlled angle is varied.

4. The method according to claim 1, wherein the generating the signal comprises generating a set signal by a latch circuit of a pixel of the array in direct response to the pixel receiving the reflected beam, wherein the set signal forwards at least one of a row address and a column address of the pixel to at least one of a column decoder circuit and a row decoder circuit.

5. The method according to claim 4, wherein the set signal is a positive voltage pulse developed by a ground-referenced photodiode current.

6. The method according to claim 1, wherein the generating the signal comprises generating a column decode signal at a pixel of the array in response to the pixel receiving the reflected beam, wherein the column decode signal forwards the column address of the pixel to a row latch circuit.

7. The method according to claim 1, wherein pixels of the array comprise at least one charge storage element, and further wherein activating the photonic interrogation beam and the array of avalanche photodiodes initiates and terminates a changing charge level of the at least one charge storage element during a time period between an emission from the interrogation beam and the receiving the reflected beam from the object, and further wherein the charge level corresponds with the TOF.

8. An optical event sensor for detecting an optical event, the optical event sensor comprising:

an array of pixels operable to be activated substantially concurrent with activation of a photonic interrogation source, the pixels comprising avalanche photodiodes, a voltage bias level of avalanche photodiodes corresponding to pixel operation in one of Geiger mode and avalanche mode;

wherein the array of pixels is operable to receive a reflected beam from the object, at the array, and to generate a signal corresponding to a location of incidence of the reflected beam on the array, wherein the signal corresponds to at least one of a pixel array address and a time-of-flight (TOF) of the interrogation beam and the reflected beam, wherein the array of pixels is operable to determine a distance to the object based upon the signal, wherein the array of pixels comprises a plurality of subsets, wherein the signal is generated based on detection of the reflected beam by a first pixel comprised by an active subset of the plurality of subsets, and wherein any detection of the reflected beam by a remainder of pixels comprised by the active subset is not included in the signal.

9. The optical event sensor according to claim 8, wherein the object is interrogated at a controlled angle of the photonic interrogation source, and further wherein the photonic interrogation source and the array of pixels are disposed at a controlled distance from each other, and wherein the distance is determined based on triangulating the controlled angle, the controlled distance, and an angle of incidence determined by the pixel array address of the reflected beam.

10. The optical event sensor according to claim 9, wherein the array is operable to shutter, comprising activating the plurality of subsets of the array in a time-varying manner, wherein a subset activation period for each subset of the plurality of subsets is based upon a value of the controlled angle and a rate at which the controlled angle is varied.

11. The optical event sensor according to claim 8, wherein the signal comprises a set signal by a latch circuit of a pixel of the array, the set signal in direct response to the pixel receiving the reflected beam, wherein the set signal forwards at least one of a row address and a column address of the pixel to at least one of a column decoder circuit and a row decoder circuit.

12. The optical event sensor according to claim 11, wherein the set signal is a positive voltage pulse developed by a ground-referenced photodiode current.

13. The optical event sensor according to claim 8, wherein the signal comprises a column decode signal at a pixel of the array, the column decode signal in response to the pixel receiving the reflected beam, wherein the column decode signal forwards the column address of the pixel to a row latch circuit.

14. The optical event sensor according to claim 13, wherein the array of pixels comprises a first substrate configured to operate at a first voltage and a second substrate configured to operate at a second voltage, wherein the first voltage is higher than the second voltage, and wherein the photodiode is comprised by the first substrate and wherein logic and control circuitry of the array of pixels is comprised by the second substrate.

15. The optical event sensor according to claim 8, wherein pixels of the array comprise at least one charge storage element, and further wherein activation of the photonic interrogation beam and the array of avalanche photodiodes is operable to initiate and terminate a changing charge level of the at least one charge storage element during a time period between an emission from the interrogation beam and the receiving the reflected beam from the object, and further wherein the charge level corresponds with the TOF.

16. A distance measuring mobile apparatus, comprising:

a processor;

a memory operatively coupled to the processor;

a photonic interrogation source configured to emit an interrogation beam for illuminating an object; and

an image sensor comprising an array of pixels and corresponding charge storage elements, the image sensor operatively coupled to the interrogation source and to the processor, the image sensor configured to receive a reflected beam generated by illumination of the object by the interrogation beam, and to develop a signal based on the reflected beam on the array, wherein activation of the interrogation source and the image sensor initiates and terminates a changing charge level of the charge storage elements during a time period between an emission from the interrogation beam and a reception of a reflected beam from the object, wherein the charge level is comprised by the signal, wherein the processor is operable to receive the signal and to output distance information of the object based on the signal, wherein the array of pixels comprises a plurality of subsets, wherein the signal is generated based on detection of the reflected beam by a first pixel comprised by an active subset of the plurality of subsets, and wherein any detection of the reflected beam by a remainder of pixels comprised by the active subset is not included in the signal.

17. The distance measuring mobile apparatus according to claim 16, wherein the charge storage elements comprise a capacitor, the capacitor configured to terminate charging upon receiving a signal generated by a photodiode of a corresponding pixel in response reception of the reflected beam.

18. The distance measuring mobile apparatus according to claim 16, wherein the array of pixels comprises an array of avalanche photodiodes operating in Geiger mode.