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Memory device, related method, and related electronic device

  • US 9,953,689 B2
  • Filed: 12/28/2016
  • Issued: 04/24/2018
  • Est. Priority Date: 12/08/2014
  • Status: Active Grant
First Claim
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1. A method of operating a memory device, the method comprising:

  • providing a first turn-on control signal through a first word line to a first memory cell to enable a first bit line to be electrically connected to a first source line for transmitting a first data signal through the first bit line;

    turning on a first transistor to enable a first input terminal of a sense amplifier to receive the first data signal, wherein a first terminal of the first transistor is electrically connected to the first bit line, and wherein a second terminal of the first transistor is electrically connected to the first input terminal of the sense amplifier;

    when providing the first turn-on signal through the first word line, providing a first turn-off control signal through a second word line to a second memory cell for disabling an electrical connection between a second bit line and a second source line; and

    when turning on the first transistor, turning on a second transistor, wherein a first terminal of the second transistor is electrically connected to the second bit line, and wherein a second terminal of the second transistor is electrically connected to a second input terminal of the sense amplifier.

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