Transistor and display device
First Claim
1. A display device comprising:
- a first gate electrode;
a first gate insulating layer over the first gate electrode;
an oxide semiconductor layer over the first gate insulating layer and including a channel formation region;
a first insulating layer over the oxide semiconductor layer, wherein the first insulating layer overlaps with at least an end portion of the oxide semiconductor layer;
a source electrode and a drain electrode each over the first insulating layer and electrically connected to the oxide semiconductor layer;
a second insulating layer over and in contact with the oxide semiconductor layer;
a first color filter layer over the first insulating layer;
a third insulating layer over the first color filter layer; and
a light-emitting element over the first color filter layer with the third insulating layer interposed between the light-emitting element and the first color filter layer, wherein the light-emitting element comprises a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode,wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
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Abstract
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
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Citations
18 Claims
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1. A display device comprising:
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a first gate electrode; a first gate insulating layer over the first gate electrode; an oxide semiconductor layer over the first gate insulating layer and including a channel formation region; a first insulating layer over the oxide semiconductor layer, wherein the first insulating layer overlaps with at least an end portion of the oxide semiconductor layer; a source electrode and a drain electrode each over the first insulating layer and electrically connected to the oxide semiconductor layer; a second insulating layer over and in contact with the oxide semiconductor layer; a first color filter layer over the first insulating layer; a third insulating layer over the first color filter layer; and a light-emitting element over the first color filter layer with the third insulating layer interposed between the light-emitting element and the first color filter layer, wherein the light-emitting element comprises a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode, wherein the oxide semiconductor layer comprises indium, gallium, and zinc. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a first gate electrode; a first gate insulating layer over the first gate electrode; an oxide semiconductor layer over the first gate insulating layer and including a channel formation region; a first insulating layer over the oxide semiconductor layer, wherein the first insulating layer overlaps with at least an end portion of the oxide semiconductor layer; a source electrode and a drain electrode each over the first insulating layer and electrically connected to the oxide semiconductor layer; a second insulating layer over and in contact with the oxide semiconductor layer; a first conductive layer over the second insulating layer; a first color filter layer over the first insulating layer; a third insulating layer over the first color filter layer; and a light-emitting element over the first color filter layer with the third insulating layer interposed between the light-emitting element and the first color filter layer, wherein the light-emitting element comprises a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode, wherein the oxide semiconductor layer comprises indium, gallium, and zinc. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification