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3D integrated circuit device

  • US 9,954,080 B2
  • Filed: 06/14/2017
  • Issued: 04/24/2018
  • Est. Priority Date: 04/09/2012
  • Status: Active Grant
First Claim
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1. A 3D integrated circuit device, comprising:

  • a first transistor;

    a second transistor; and

    a third transistor,wherein said third transistor is overlaying said second transistor and said second transistor is overlaying said first transistor,wherein said first transistor controls the supply of a ground or a power signal to said third transistor, andwherein said first transistor, said second transistor and said third transistor are aligned to each other with less than 100 nm misalignment.

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