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Semiconductor structures having increased channel strain using fin release in gate regions

  • US 9,954,083 B2
  • Filed: 08/20/2015
  • Issued: 04/24/2018
  • Est. Priority Date: 08/20/2015
  • Status: Active Grant
First Claim
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1. A strained FinFET structure, comprising:

  • a lower fin material formed on a substrate, the lower fin material disposed at opposing ends of a channel region;

    an upper fin material formed on the lower fin material, the upper fin material comprising a strained semiconductor material, and wherein the lower fin material comprises a material that is etch selective with respect to the upper fin material;

    wherein the channel region below the upper portion comprises a removed section of the lower fin material such that the upper fin material in the channel region is released from the substrate, thereby resulting in strain introduced throughout an entire height of the upper fin material in the channel region; and

    a carbon doped silicon (Si;

    C) diffusion barrier disposed between the lower fin material and the upper fin material;

    wherein the lower fin material comprises n-doped silicon having a dopant concentration of about 1E21 atoms/cm2;

    the upper fin material comprises a compressively stressed silicon germanium (SiGe) layer having a germanium concentration of about 25% Ge atomic.

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