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Semiconductor device and method of manufacturing same

  • US 9,954,095 B2
  • Filed: 01/08/2017
  • Issued: 04/24/2018
  • Est. Priority Date: 03/11/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate having a first surface and a second surface, which is a surface on a side of the semiconductor substrate opposite to the first surface;

    a drain region in the semiconductor substrate proximal to the second surface and having a first conductivity type;

    a drift region in the semiconductor substrate between the first surface and the drain region, and having the first conductivity type;

    a base region in the semiconductor substrate between the first surface and the drift region, and having a second conductivity type;

    a source region in the semiconductor substrate at the first surface, and having the first conductivity type, the base region being sandwiched between the source region and the drift region;

    a gate electrode opposite to the base region sandwiched between the drift region and the source region, the gate electrode being insulated from the base region;

    a wiring provided over the first surface and electrically coupled to the source region; and

    a first conductive film provided over the first surface and electrically coupled to the drain region,wherein the first conductive film is, over the first surface, opposite to the wiring while being insulated therefrom.

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