Semiconductor device

• US 9,954,111 B2
• Filed: 03/17/2015
• Issued: 04/24/2018
• Est. Priority Date: 03/18/2014
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Suzawa, Hideomi
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Kim, Tong-Ho
• Application Number:
  US14/659,656
• Publication Number:
  US 20150270288A1
• Time in Patent Office: 1,134 Days
• Field of Search: 257306, 257 57, 257 66
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.

Claims

1. A semiconductor device comprising:

a first transistor, the first transistor comprising;

a first semiconductor;

a first insulator; and

a first conductor;

a second insulator over the first transistor, wherein the second insulator is provided over the first conductor;

a second transistor over the second insulator, the second transistor comprising;

a second semiconductor;

a third insulator; and

a second conductor;

a fourth insulator over the second transistor; and

a capacitor over the fourth insulator, the capacitor comprising;

a first part of a third conductor;

a fourth conductor; and

a fifth insulator,

wherein a part of the first conductor overlaps with the first semiconductor with the first insulator interposed therebetween,

wherein a part of the second conductor overlaps with the second semiconductor with the third insulator interposed therebetween,

wherein the first part of the third conductor faces the fourth conductor with the fifth insulator interposed therebetween,

wherein the third conductor is electrically connected to the first conductor through a first opening in the second insulator and a second opening in the fourth insulator,

wherein the third conductor is electrically connected to the second semiconductor through the second opening in the fourth insulator,

wherein a second part of the third conductor is provided in the second opening, wherein the second part of the third conductor includes the same material as that included in the first part of the third conductor, and

wherein a third part of the third conductor is provided in the first opening.

2. The semiconductor device according to claim 1, wherein the fifth insulator comprises an element included in the fourth conductor.

3. The semiconductor device according to claim 1, wherein the first semiconductor comprises silicon.

4. The semiconductor device according to claim 1, wherein the second semiconductor comprises indium.

5. The semiconductor device according to claim 1, wherein the first semiconductor is a part of a semiconductor substrate.

6. The semiconductor device according to claim 1, wherein the first semiconductor has a projection provided on a semiconductor substrate.

7. The semiconductor device according to claim 1,

wherein a direction of the third conductor is substantially perpendicular to the second semiconductor.

8. The semiconductor device according to claim 1, wherein the first part of the third conductor includes the same material as that included in the third part of the third conductor.

9. A semiconductor device comprising:

a first transistor;

a first insulator over the first transistor;

a second transistor over the first insulator;

a second insulator over the second transistor; and

a capacitor comprising a first part of a third conductor,

wherein the third conductor is electrically connected to a gate electrode of the first transistor and one of a source electrode and a drain electrode of the second transistor,

wherein a second part of the third conductor is provided in an opening of the first insulator, and

wherein a third part of the third conductor is provided in an opening of the second insulator.

10. The semiconductor device according to claim 9, wherein the capacitor is located over the second insulator.

11. The semiconductor device according to claim 9, wherein the capacitor is located over the first insulator and under the second transistor.