Electrostatically enhanced fins field effect transistors

• US 9,954,116 B2
• Filed: 11/03/2016
• Issued: 04/24/2018
• Est. Priority Date: 07/15/2014
• Status: Expired due to Fees

• Current Assignee: Elpis Technologies Inc. (Wi-LAN Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Cheng, Kangguo, Doris, Bruce B., Hashemi, Pouya, Khakifirooz, Ali, Reznicek, Alexander
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US15/342,268
• Publication Number:
  US 20170054035A1
• Time in Patent Office: 537 Days
• CPC Class Codes: H01L 21/02233 of the semiconductor substrate or a semiconductor layer
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823821 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/845 including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0924 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/1211 combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/41791 for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66818 the channel being thinned after patterning, e.g. sacrificial oxidation on fin
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7853 the body having a non-rectangular crossection
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 12/056 : the transistor being a FinFET

Abstract

Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The electrostatic enhancement is achieved in the present application by epitaxially growing a semiconductor material protruding portion on exposed sidewalls of alternating semiconductor material portions of at least one hard mask capped semiconductor-containing fin structure that is formed on a substrate.

Claims

1. A semiconductor structure comprising:

a semiconductor-containing fin structure located on a surface of a base layer, wherein said semiconductor-containing fin structure comprises, from bottom to top, and in an alternating manner, at least one first semiconductor material portion, and at least one second semiconductor material portion, wherein said at least one second semiconductor material portion has a width that is less than a width of said at least one first semiconductor material portion;

an oxide cap portion located on a sidewall of said at least one second semiconductor material portion, wherein a sidewall surface of said oxide cap portion is vertically coincident with a sidewall surface of said at least one first semiconductor material portion; and

a semiconductor material protruding portion located on said sidewall surface of said at least one first semiconductor material portion.

2. The semiconductor structure of claim 1, wherein said semiconductor material protruding portion has a shape of a triangular and wherein a base of said triangular is formed directly on said exposed semiconductor sidewall surface of said least one first semiconductor material portion.

3. The semiconductor structure of claim 1, wherein a topmost surface of said at least one first semiconductor material portion is in direct physical contact with a bottommost surface of said at least one second semiconductor material portion.

4. The semiconductor structure of claim 1, further comprising a functional gate structure surrounding said semiconductor-containing fin structure.

5. The semiconductor structure of claim 1, wherein said at least one first semiconductor material portion is composed of a different semiconductor material than said at least one second semiconductor material portion.

6. The semiconductor structure of claim 1, wherein said at least one first semiconductor material portion is composed of a semiconductor material that has a slower oxidation rate than a semiconductor material that provides the at least one second semiconductor material portion.

7. The semiconductor structure of claim 6, wherein said at least one first semiconductor material portion is composed of Si_1-xGe_x wherein x is 0 to less than 1, and said at least one second semiconductor material portion is composed of Si_1-yGe_y wherein y is from 0.1 to 1.

8. The semiconductor structure of claim 1, wherein said at least one first semiconductor material portion comprises a plurality of first semiconductor material portions, and said at least one second semiconductor material portion comprises a plurality of second semiconductor material portions.

9. The semiconductor structure of claim 1, wherein said base layer is composed of a semiconductor material, an insulator layer or a multilayered stack of a semiconductor material and an insulator layer.

10. The semiconductor structure of claim 1, further comprising a hard mask cap located atop said semiconductor-containing fin structure.

11. The semiconductor structure of claim 1, wherein said base layer has a concave upper surface located adjacent each side of said semiconductor-containing fin structure.