Semiconductor image sensor module and method of manufacturing the same
First Claim
1. An image sensor comprising:
- a first semiconductor part including a plurality of pixels arranged in a first array and an interlayer insulation film having multilayer wirings, respective ones of the pixels including a photoelectric conversion element disposed at a light-incident side of the first semiconductor part, wherein the interlayer insulation film is disposed below the photoelectric conversion element in a cross-section perspective, and disposed at a side of the first semiconductor part opposite to the light-incident side, anda second semiconductor part including a plurality of analog/digital converters arranged in a second array; and
a third semiconductor part including a memory element array,wherein the first, second, and third semiconductor parts are stacked and electrically connected to one another,the first, second, and third semiconductor parts are electrically connected through a first contact portion and a second contact portion, and at least one of the first contact portion and the second contact portion is disposed through at least a portion of the first, second, and third semiconductor parts,the first contact portion includes a first wiring part, a second wiring part, and a third wiring part that are electrically connected to one another, andthe first wiring part is disposed above a light-incident surface of the first semiconductor part in the cross-section perspective, the second wiring part is connected to the first wiring part and a wiring of the multilayer wirings, and the third wiring part is connected to the first wiring part, is not directly connected to the multilayer wirings, and is disposed through the first semiconductor part such that the first semiconductor part is electrically connected to the second semiconductor part.
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Abstract
A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
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Citations
21 Claims
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1. An image sensor comprising:
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a first semiconductor part including a plurality of pixels arranged in a first array and an interlayer insulation film having multilayer wirings, respective ones of the pixels including a photoelectric conversion element disposed at a light-incident side of the first semiconductor part, wherein the interlayer insulation film is disposed below the photoelectric conversion element in a cross-section perspective, and disposed at a side of the first semiconductor part opposite to the light-incident side, and a second semiconductor part including a plurality of analog/digital converters arranged in a second array; and a third semiconductor part including a memory element array, wherein the first, second, and third semiconductor parts are stacked and electrically connected to one another, the first, second, and third semiconductor parts are electrically connected through a first contact portion and a second contact portion, and at least one of the first contact portion and the second contact portion is disposed through at least a portion of the first, second, and third semiconductor parts, the first contact portion includes a first wiring part, a second wiring part, and a third wiring part that are electrically connected to one another, and the first wiring part is disposed above a light-incident surface of the first semiconductor part in the cross-section perspective, the second wiring part is connected to the first wiring part and a wiring of the multilayer wirings, and the third wiring part is connected to the first wiring part, is not directly connected to the multilayer wirings, and is disposed through the first semiconductor part such that the first semiconductor part is electrically connected to the second semiconductor part. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 21)
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15. A method of making an image sensor module, comprising the steps of:
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forming a first semiconductor part, the first semiconductor part including a plurality of pixels arranged in a first array and an interlayer insulation film having multilayer wirings, respective ones of the pixels including a photoelectric conversion element disposed at a light-incident side of the first semiconductor part, wherein the interlayer insulation film is disposed below the photoelectric conversion element in a cross-section perspective, and disposed at a side of the first semiconductor part opposite to the light-incident side; forming a second semiconductor part, the second semiconductor part including a plurality of analog/digital converters arranged in a second array; forming a third semiconductor part, the third semiconductor part including a memory element array; and stacking and electrically connecting the first, second, and third semiconductor parts to one another, wherein the first, second, and third semiconductor parts are electrically connected through a first contact portion and a second contact portion, and at least one of the first contact portion and the second contact portion is disposed through at least a portion of the first, second, and third semiconductor parts and extending from a respective first surface of the corresponding at least one of the first, second, and third semiconductor parts, the first contact portion includes a first wiring part, a second wiring part, and a third wiring part that are electrically connected to one another, and the first wiring part is disposed above a light-incident surface of the first semiconductor part in the cross-section perspective, the second wiring part is connected to the first wiring part and a wiring of the multilayer wirings, and the third wiring part is connected to the first wiring part, is not directly connected to the multilayer wirings, and is disposed through the first semiconductor part such that the first semiconductor part is electrically connected to the second semiconductor part. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification