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Micromechanical pressure sensor device and corresponding manufacturing method

  • US 9,958,348 B2
  • Filed: 11/17/2014
  • Issued: 05/01/2018
  • Est. Priority Date: 01/14/2014
  • Status: Active Grant
First Claim
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1. A micromechanical pressure sensor device, comprising:

  • an ASIC wafer having a front side and a rear side;

    a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers;

    a MEMS wafer having a front side and a rear side;

    a first micromechanical functional layer which is formed above the front side of the MEMS wafer;

    a second micromechanical functional layer which is formed above the first micromechanical functional layer;

    a diaphragm area which may be acted on by pressure through a via in the MEMS wafer being formed as a deflectable first pressure detection electrode in one of the first and second micromechanical functional layers; and

    a stationary second pressure detection electrode formed in the other of the first and second micromechanical functional layers, at a distance and opposite from the diaphragm area;

    wherein the second micromechanical functional layer is connected to the rewiring system by way of a bond connection in such a way that the stationary second pressure detection electrode is enclosed in a cavity, the rewiring system capping the cavity to enclose the stationary second pressure detection electrode;

    wherein the diaphragm area is formed in the first micromechanical functional layer, and the stationary second pressure detection electrode is formed in the second micromechanical functional layer; and

    wherein the stationary second pressure detection electrode has at least one anchoring area, which is anchored on the first micromechanical functional layer, the second micromechanical functional layer having a contact area separated from the anchoring area, which is anchored on the first micromechanical functional layer and has an electrical connection to an uppermost strip conductor level of the stacked strip conductor levels of the rewiring system by way of an area of the bond connection, and the anchoring area of the stationary second pressure detection electrode and the contact area of the second mechanical functional layer being electrically connected to each other by way of the first micromechanical functional layer.

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