×

ChemFET sensor including floating gate

  • US 9,958,415 B2
  • Filed: 05/04/2015
  • Issued: 05/01/2018
  • Est. Priority Date: 09/15/2010
  • Status: Active Grant
First Claim
Patent Images

1. A chemical sensor, comprising:

  • a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;

    a dielectric material defining an opening extending to the upper surface of the floating gate conductor; and

    an electrode capacitively coupled to the floating gate conductor;

    wherein an electrically conductive material is disposed on the upper surface of the floating gate conductor and wherein the dielectric material defines a sidewall of the opening, and the electrically conductive material extends incompletely up the sidewall.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×