Computing device executing program performing method of analyzing power noise in semiconductor device, semiconductor device design method, and program storage medium storing program
First Claim
1. A computing device that includes a memory storing a program and a processor that executes the program, wherein, when executed by the processor, the program performs a process for analyzing power noise in a semiconductor device, where the semiconductor device includes a transistor model and a power network modeled according to a power network model, the process comprising:
- obtaining first current information of a current in the transistor model before an analysis is performed on the current in the transistor model, without using an ideal supply voltage condition and based on an assumption that the power network model exists;
performing a first operation on the first current information and a power network matrix that represents an electrical characteristic of the power network model, to generate a first analysis result at a first time;
obtaining second current information of the current in the transistor model after generating the first analysis result, using the ideal supply voltage condition and based on an assumption that the power network model does not exist, and using the first analysis result;
modifying the second current information, at a second time after the first time, to generate a second analysis result comprising second modified current information; and
analyzing power noise for the semiconductor device for a period including from the first time to the second time by performing a second operation on the second analysis result and the power network matrix to generate a power noise analysis,wherein the semiconductor device is fabricated based on a result of the analyzing power noise, andwherein the second modified current information is generated by performing a third operation on the second current information, the first analysis result, and parameters of the transistor model, andthe first analysis result is a result of reflecting power noise when the power network model is connected to the transistor model.
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Abstract
A method of analyzing power noise in a semiconductor device includes; generating modified current information by modifying present current information based on a previous analysis result, updating a current vector based on the modified current information, and generating a present analysis result by calculating a voltage vector from the updated current vector.
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Citations
11 Claims
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1. A computing device that includes a memory storing a program and a processor that executes the program, wherein, when executed by the processor, the program performs a process for analyzing power noise in a semiconductor device, where the semiconductor device includes a transistor model and a power network modeled according to a power network model, the process comprising:
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obtaining first current information of a current in the transistor model before an analysis is performed on the current in the transistor model, without using an ideal supply voltage condition and based on an assumption that the power network model exists; performing a first operation on the first current information and a power network matrix that represents an electrical characteristic of the power network model, to generate a first analysis result at a first time; obtaining second current information of the current in the transistor model after generating the first analysis result, using the ideal supply voltage condition and based on an assumption that the power network model does not exist, and using the first analysis result; modifying the second current information, at a second time after the first time, to generate a second analysis result comprising second modified current information; and analyzing power noise for the semiconductor device for a period including from the first time to the second time by performing a second operation on the second analysis result and the power network matrix to generate a power noise analysis, wherein the semiconductor device is fabricated based on a result of the analyzing power noise, and wherein the second modified current information is generated by performing a third operation on the second current information, the first analysis result, and parameters of the transistor model, and the first analysis result is a result of reflecting power noise when the power network model is connected to the transistor model. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A computer-readable storage medium that stores a program which, when executed by a processor, performs a process for analyzing power noise in a semiconductor device modeled according to a power network model and a transistor model, the process comprising:
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obtaining first current information of a current in the transistor model before an analysis is performed on the current in the transistor model, without using an ideal supply voltage condition and based on an assumption that the power network model exists; performing a first operation on the first current information and a power network matrix that represents an electrical characteristic of the power network model, to generate a first analysis result at a first time; obtaining second current information of the current in the transistor model after generating the first analysis result, using the ideal supply voltage condition and based on an assumption that the power network model does not exist, and using the first analysis result; modifying the second current information, at a second time after the first time, to generate a second analysis result comprising second modified current information; and analyzing power noise for the semiconductor device for a period including from the first time to the second time by performing a second operation on the second analysis result and the power network matrix to generate a power noise analysis, wherein the semiconductor device is fabricated based on a result of the analyzing power noise, and wherein the second modified current information is generated by performing a third operation on the second current information, the first analysis result, and parameters of the transistor model, and the first analysis result is a result of reflecting power noise when the power network model is connected to the transistor model. - View Dependent Claims (9, 10, 11)
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Specification