Method for film formation, and pattern-forming method

• US 9,958,781 B2
• Filed: 04/21/2016
• Issued: 05/01/2018
• Est. Priority Date: 04/24/2015
• Status: Active Grant

• Current Assignee: JSR Corporation
• Original Assignee: JSR Corporation
• Inventors: Matsumura, Yuushi, Wakamatsu, Goji, Nosaka, Naoya, Abe, Tsubasa, Takimoto, Yoshio
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US15/134,508
• Publication Number:
  US 20160314984A1
• Time in Patent Office: 740 Days
• CPC Class Codes: C08G 8/22 Resorcinol
• CPC Class Codes: C08G 8/30 by unsaturated compounds, e.g. terpenes
• CPC Class Codes: C09D 161/14 Modified phenol-aldehyde condensates
• CPC Class Codes: G03F 7/0041 providing an etching agent upon exposure G03F7/075 takes precedence; photolytic halogen compounds G03F7/0295
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: H01L 21/0271 comprising organic layers

Abstract

A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

Claims

1. A pattern-forming method comprising:

applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate;

heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450°

C. and 800°

C. or lower, to form a resist underlayer film on the upper face side of the substrate,

forming a resist pattern on an upper face side of the resist underlayer film; and

forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern,

wherein the composition comprises an aromatic ring-containing compound having a molecular weight of no less than 600 and no greater than 3,000,

the aromatic ring-containing compound comprises a partial structure represented by formula (5), a partial structure represented by formula (6), or both thereof;

2. The pattern-forming method according to claim 1, wherein the oxygen concentration in the atmosphere during the heating of the coating film is no greater than 0.1% by volume.

3. The pattern-forming method according to claim 1, wherein the temperature in the atmosphere during the heating of the coating film is 500°

C. or higher and 600°

C. or lower.

4. The pattern-forming method according to claim 1, wherein the composition further comprises a solvent.

6. The pattern-forming method according to claim 1, the composition further comprises an acid generating agent.

7. The pattern-forming method according to claim 1, the composition further comprises a crosslinking agent.

5. A pattern-forming method comprising:

applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate;

heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450°

C. and 800°

C. or lower, to form a resist underlayer film on the upper face side of the substrate,

forming a resist pattern on an upper face side of the resist underlayer film; and

forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern,

wherein the composition comprises an aromatic ring-containing compound having a molecular weight of no less than 600 and no greater than 3,000,

the aromatic ring-containing compound comprises a partial structure represented by formula (5), a partial structure represented by formula (6), or both thereof;

8. The pattern-forming method according to claim 5, wherein the oxygen concentration in the atmosphere during the heating of the coating film is no greater than 0.1% by volume.

9. The pattern-forming method according to claim 5, wherein the temperature in the atmosphere during the heating of the coating film is 500°

C. or higher and 600°

C. or lower.

10. The pattern-forming method according to claim 5, wherein the composition further comprises a solvent.

11. The pattern-forming method according to claim 5, the composition further comprises an acid generating agent.

12. The pattern-forming method according to claim 5, the composition further comprises a crosslinking agent.