Carbon dopant gas and co-flow for implant beam and source life performance improvement

• US 9,960,042 B2
• Filed: 02/13/2013
• Issued: 05/01/2018
• Est. Priority Date: 02/14/2012
• Status: Active Grant

• Current Assignee: Entegris Incorporated
• Original Assignee: Entegris Incorporated
• Inventors: Byl, Oleg, Sturm, Edward A., Tang, Ying, Yedave, Sharad N., Sweeney, Joseph D., Sergi, Steven G., Chambers, Barry Lewis
• Primary Examiner(s): Oh, Jaehwan
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US14/378,963
• Publication Number:
  US 20160020102A1
• Time in Patent Office: 1,903 Days
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3171 for ion implantation
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 33/005 Processes

Abstract

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Claims

1. An ion implantation method, comprising:

flowing a carbon dopant source composition to an ion implanter configured for carbon doping of a substrate; and

operating the ion implanter to generate carbon dopant species from the carbon dopant source composition and to implant the carbon dopant species in the substrate, wherein the carbon dopant source composition is co-flowed to the ion implanter with at least one co-flow gas or is flowed to the ion implanter in mixture with at least one additional gas, wherein the at least one co-flow gas or at least one additional gas comprises gas selected from the group consisting of;

GeH₄, SiH₄, XeF₂, BF₃, SF₆, GeF₄, SiF₄, NF₃, N₂F₄, HF, WF₆, MoF₆, PF₃, PF₅, and B₂F₄,

wherein said operating generates a beam current, and the at least one co-flow gas or the at least one additional gas increases the beam current in a mixture of the carbon dopant source and the at least one co-flow gas or the at least one additional gas, as compared to the carbon dopant source without the at least one co-flow gas or the at least one additional gas.

2. The method of claim 1, wherein the carbon dopant source composition comprises at least one carbon dopant source material selected from the group consisting of:

CO;

CO₂;

CF₄;

CH₄;

COF₂;

CH₂O;

C₂F₄H₂;

C₂H₆;

compounds of the formula C_xF_wO_yH_zCl_vN_u, wherein x is greater than or equal to 1, w is greater than or equal to 0, y is greater than or equal to 0, z is greater than or equal to 0, v is greater than or equal to 0, and u is greater than or equal to 0, with the proviso that at least one of w, y, z, v, and u has a non-zero value;

hydrocarbons;

alkanes;

cyclic alkanes;

alkenes;

cyclic alkenes;

polyenes;

cyclic polyenes;

alkynes;

cyclic alkynes;

arenes, and their derivatives;

partially and fully halogenated hydrocarbons;

alcohols of general formula ROH, wherein R is an organo moiety;

halogenated alcohols;

aldehydes;

ethers;

halogenated ethers;

esters;

halogenated esters;

primary amines;

secondary amines;

tertiary amines;

halogenated amines;

N-halogenated amines;

nitro (RNO₂) and nitroso (RNO) alkyl and halogenated alkyl compounds;

halides, wherein the number of carbon atoms is 1;

halides containing two carbon atoms; and

halides and hydrides containing multiple carbon atoms.

3. The method of claim 1, wherein the carbon dopant source composition comprises at least one carbon dopant source material selected from the group consisting of:

CO;

CO₂;

CF₄;

CH₄;

COF₂;

CH₂O;

C₂F₄H₂; and

C₂H₆.

4. The method of claim 1, wherein the carbon dopant source composition comprises CO.

5. The method of claim 1, wherein the carbon dopant source composition comprises CO₂.

6. The method of claim 1, wherein the carbon dopant source composition comprises CF₄.

7. The method of claim 1, wherein the carbon dopant source composition comprises CH₄.

8. The method of claim 1, wherein the carbon dopant source composition comprises COF₂.

9. The method of claim 1, wherein the at least one co-flow gas or at least one additional gas comprises NF₃.

10. The method of claim 9, wherein the carbon dopant source composition comprises CO.

11. The method of claim 9, wherein the carbon dopant source composition comprises CO₂.

12. The method of claim 9, wherein the carbon dopant source composition comprises CF₄.

13. The method of claim 9, wherein the carbon dopant source composition comprises CH₄.

14. The method of claim 9, wherein the carbon dopant source composition comprises COF₂.

15. The method of claim 1, wherein the substrate comprises a semiconductor substrate, solar panel substrate, LED substrate, or flat panel substrate.

16. The method of claim 1, wherein the at least one co-flow gas or the at least one additional gas is present in an amount in the range of 0.001 to 20% (volume) of a mixture of the carbon dopant source and the at least one co-flow gas or the at least one additional gas.

17. The method of claim 16, wherein the at least one co-flow gas or the at least one additional gas is present in an amount in the range of 0.5 to 15% (volume) of the mixture.

18. The method of claim 17, wherein the at least one co-flow gas or the at least one additional gas is present in an amount in the range of 0.5 to 10% (volume) of the mixture.