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Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

  • US 9,960,048 B2
  • Filed: 03/02/2017
  • Issued: 05/01/2018
  • Est. Priority Date: 02/13/2013
  • Status: Active Grant
First Claim
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1. A grinding plate for surface machining a single crystal SiC substrate including a soft pad and a hard pad sequentially attached onto a base metal having a flat surface,wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad, andwherein the hard pad is segmented.

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