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Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process

  • US 9,960,160 B2
  • Filed: 08/29/2013
  • Issued: 05/01/2018
  • Est. Priority Date: 08/18/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a silicon substrate;

    an isolation structure formed in the silicon substrate for isolating a first active region and a second active region;

    a first transistor formed in the first active region, the first transistor having an interfacial layer, a capping layer over the interfacial layer, a high-k gate dielectric layer over the capping layer, and a metal gate with a first work function formed over the high-k gate dielectric layer, wherein the metal gate with the first work function is formed from a first portion of a metal nitride layer, the first portion of the metal nitride layer having a first chemical composition XN, where X denotes a transition metal; and

    a second transistor formed in the second active region, the second transistor having the interfacial layer, the capping layer over the interfacial layer, the high-k gate dielectric layer over the capping layer, and a metal gate with a second work function formed over the high-k gate dielectric layer, wherein the metal gate with the second work function is formed from a second portion of the metal nitride layer, the second portion of the metal nitride layer having a second chemical composition XAlN.

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