Semiconductor device with stripe-shaped trench gate structures and gate connector structure
First Claim
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1. A semiconductor device, comprising:
- a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body;
a gate connector structure at a distance to the first surface and at a distance to end sections of the trench gate structure, and electrically connected to a gate electrode in the trench gate structure;
a gate dielectric separating the gate electrode from the semiconductor body, wherein an active section of the gate dielectric is thinner than sections elsewhere within the trench gate structure; and
wherein the active section comprises a first portion of a first sublayer and the sections of the gate dielectric elsewhere comprise a second sublayer, which is absent in the active section, and a second portion of the first sublayer.
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Abstract
A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure.
6 Citations
19 Claims
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1. A semiconductor device, comprising:
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a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body; a gate connector structure at a distance to the first surface and at a distance to end sections of the trench gate structure, and electrically connected to a gate electrode in the trench gate structure; a gate dielectric separating the gate electrode from the semiconductor body, wherein an active section of the gate dielectric is thinner than sections elsewhere within the trench gate structure; and wherein the active section comprises a first portion of a first sublayer and the sections of the gate dielectric elsewhere comprise a second sublayer, which is absent in the active section, and a second portion of the first sublayer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device, comprising:
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a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body, wherein the transistor cell includes an active section through which a load current flows in a vertical direction perpendicular to the first surface when the transistor cell is in an on-state and an idle section through which no load current flows in the vertical direction when the transistor cell is in the on-state;
whereina second section of a gate dielectric in the idle section includes at least one sublayer more than a first section of the gate dielectric in the active section. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body, wherein the transistor cell includes an active section through which a load current flows in a vertical direction perpendicular to the first surface when the transistor cell is in an on-state and an idle section through which no load current flows in the vertical direction when the transistor cell is in the on-state;
whereina second section of a gate dielectric in the idle section is thicker than a first section of the gate dielectric, in the active section and separates a gate electrode in the trench structures from body zones. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification