Method for manufacturing semiconductor device

• US 9,960,261 B2
• Filed: 05/26/2017
• Issued: 05/01/2018
• Est. Priority Date: 03/24/2015
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): DIALLO, MAMADOU L
• Application Number:
  US15/606,030
• Publication Number:
  US 20170365693A1
• Time in Patent Office: 340 Days
• CPC Class Codes: H01L 21/425 producing ion implantation
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7782 with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 12/30 DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

A transistor with stable electrical characteristics is provided. Provided is a method for manufacturing a semiconductor device that includes, over a substrate, an oxide semiconductor, a first conductor, a first insulator, a second insulator, and a third insulator. The oxide semiconductor is over the first insulator. The second insulator is over the oxide semiconductor. The third insulator is over the second insulator. The first conductor is over the third insulator. The oxide semiconductor has a first region and a second region. To form the first region, ion implantation into the oxide semiconductor is performed using the first conductor as a mask, and then hydrogen is added to the oxide semiconductor using the first conductor as a mask.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming an oxide semiconductor comprising indium, gallium, and zinc;

forming a first insulator over the oxide semiconductor;

forming a first conductor over the first insulator, wherein the first conductor overlaps with the oxide semiconductor;

after forming the first conductor, forming an oxygen vacancy site in a first position of the oxide semiconductor, wherein the first position does not overlap with the first conductor; and

supplying hydrogen into the oxygen vacancy site in the first position of the oxide semiconductor.

2. The method according to claim 1, wherein the hydrogen is supplied from inside of the oxide semiconductor.

3. The method according to claim 1,

wherein the hydrogen is supplied from a second position of the oxide semiconductor, and

wherein the second position overlaps with the first conductor.

4. The method according to claim 1, wherein the hydrogen is supplied from outside of the oxide semiconductor.

5. The method according to claim 1, wherein the hydrogen is supplied into the oxygen vacancy site by an ion implanting method.

6. The method according to claim 1, wherein the hydrogen is supplied into the oxygen vacancy site by performing a heat treatment.

7. The method according to claim 1, further comprising the step of forming a second insulator on a side surface of the first conductor after forming the oxygen vacancy site, wherein the hydrogen is supplied into the oxygen vacancy site after the second insulator is formed.

8. The method according to claim 1, further comprising the steps of:

forming a second insulator over the first conductor after the hydrogen is supplied into the oxygen vacancy site; and

forming a second conductor and a third conductor over the second insulator, wherein the second conductor and the third conductor are electrically connected to the oxide semiconductor.

9. A method for manufacturing a semiconductor device, comprising:

forming an oxide semiconductor comprising indium, gallium, and zinc;

forming a first insulator over the oxide semiconductor;

forming a first conductor over the first insulator, wherein the first conductor overlaps with the oxide semiconductor;

after forming the first conductor, forming an oxygen vacancy site in a first position of the oxide semiconductor, wherein the first position does not overlap with the first conductor; and

after forming the oxygen vacancy site, forming a donor level in the first position.

10. The method according to claim 9, wherein the hydrogen is supplied from inside of the oxide semiconductor.

11. The method according to claim 9,

wherein the hydrogen is supplied from a second position of the oxide semiconductor, and

wherein the second position overlaps with the first conductor.

12. The method according to claim 9, wherein the hydrogen is supplied from outside of the oxide semiconductor.

13. The method according to claim 9, wherein the hydrogen is supplied into the oxygen vacancy site by an ion implanting method.

14. The method according to claim 9, wherein the hydrogen is supplied into the oxygen vacancy site by performing a heat treatment.

15. The method according to claim 9, further comprising the step of forming a second insulator on a side surface of the first conductor after forming the oxygen vacancy site, wherein the hydrogen is supplied into the oxygen vacancy site after the second insulator is formed.

16. The method according to claim 9, further comprising the steps of:

forming a second insulator over the first conductor after the hydrogen is supplied into the oxygen vacancy site; and

forming a second conductor and a third conductor over the second insulator, wherein the second conductor and the third conductor are electrically connected to the oxide semiconductor.

17. A method for manufacturing a semiconductor device, comprising:

forming an oxide semiconductor comprising indium, gallium, and zinc;

forming a first insulator over the oxide semiconductor;

forming a first conductor over the first insulator, wherein the first conductor overlaps with the oxide semiconductor;

after forming the first conductor, implanting an ion into a first position of the oxide semiconductor from the first conductor side, wherein the first position does not overlap with the first conductor; and

after implanting the ion, performing a heat treatment on the oxide semiconductor.

18. The method according to claim 17, wherein the ion is any of a helium ion, a neon ion, a krypton ion, and a xenon ion.

19. The method according to claim 17,

wherein a hydrogen is supplied from a second position of the oxide semiconductor to the first position of the oxide semiconductor by the heat treatment, and

wherein the second position overlaps with the first conductor.

20. The method according to claim 17, further comprising the step of implanting hydrogen into the first position of the oxide semiconductor from the first conductor side after performing the heat treatment.

21. The method according to claim 17, further comprising the steps of:

forming a second insulator over the first conductor after performing the heat treatment; and

forming a second conductor and a third conductor over the second insulator, wherein the second conductor and the third conductor are electrically connected to the oxide semiconductor.