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Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device

  • US 9,960,268 B2
  • Filed: 10/07/2016
  • Issued: 05/01/2018
  • Est. Priority Date: 10/15/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a drift region of a device structure arranged in a semiconductor layer, wherein the drift region comprises at least one first drift region portion and at least one second drift region portion, wherein a majority of dopants within the at least one first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer, wherein a majority of dopants within the at least one second drift region portion are a second species of dopants; and

    a trench extending from a surface of the semiconductor layer into the semiconductor layer, wherein a vertical distance between the surface of the semiconductor layer and a border between the at least one first drift region portion and the at least one second drift region portion is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench,wherein the at least one second drift region portion is located between the surface of the semiconductor layer and the at least one first drift region portion.

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