Semiconductor device

• US 9,960,572 B2
• Filed: 08/12/2016
• Issued: 05/01/2018
• Est. Priority Date: 03/11/2014
• Status: Active Grant

• Current Assignee: Furukawa Electric Company Limited
• Original Assignee: Furukawa Electric Company Limited
• Inventors: Iwami, Masayuki, Ishii, Hirotatsu, Iwai, Norihiro, Matsuda, Takeyoshi, Kasukawa, Akihiko, Ishikawa, Takuya, Kawakita, Yasumasa, Kaji, Eisaku
• Primary Examiner(s): King, Joshua
• Application Number:
  US15/235,756
• Publication Number:
  US 20160351392A1
• Time in Patent Office: 627 Days
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/201 including two or more compounds , e.g. alloys H01L29/2006 takes precedence
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/7784 with delta or planar doped donor layer H01L29/7785 takes precedence
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/868 PIN diodes
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/036 characterised by their crystalline structure or particular orientation of the crystalline planes
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01S 5/2224 semi-insulating semiconductors
• CPC Class Codes: H01S 5/227 Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/309 doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure barriers in quantum wells per se H01S5/3407
• CPC Class Codes: H01S 5/32 comprising PN junctions, e.g. hetero- or double- heterostructures H01S5/34, H01S5/36 take precedence
• CPC Class Codes: H01S 5/32358 containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
• CPC Class Codes: H01S 5/32366 (In)GaAs with small amount of N
• CPC Class Codes: H01S 5/34313 : with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/3434 : with a well layer comprising at least both As and P as V-compounds
• CPC Class Codes: H01S 5/34373 : based on InGa(Al)AsP

Abstract

A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

Claims

1. A semiconductor device comprising:

an active layer formed of a III-V group semiconductor crystal including As as a primary component of a V group, wherein

a <

110>

dumbbell formed of As is formed in the active layer,

the active layer is a quantum well structure layer including a well layer and a barrier layer, and

P has been introduced at a concentration of 0.02 to 3% into a V group site of the III-V group semiconductor crystal in the well layer and the barrier layer to stabilize the <

110>

dumbbell.

2. The semiconductor device according to claim 1, wherein the active layer formed of the III-V group semiconductor crystal including As as the primary component of the V group, is any one of GaAs, AlGaAs, InGaAs, and AlGaInAs or a combination thereof, and the P has been introduced at the concentration of 0.02 to 3% into the V group site of the III-V group semiconductor crystal in the well layer and the barrier layer to stabilize the <

110>

dumbbell.