Method of making a sapphire component including machining a sapphire single crystal

• US 9,963,800 B2
• Filed: 09/18/2017
• Issued: 05/08/2018
• Est. Priority Date: 04/08/2004
• Status: Expired due to Term

• Current Assignee: Luxium Solutions LLC
• Original Assignee: Saint-Gobain Ceramics & Plastics Incorporated (Compagnie De Saint-Gobain)
• Inventors: Locher, John Walter, Zanella, Steven Anthony, MacLean, Jr., Ralph Lampson, Bates, Herbert Ellsworth
• Primary Examiner(s): Bratland, Jr., Kenneth A
• Application Number:
  US15/707,585
• Publication Number:
  US 20180016704A1
• Time in Patent Office: 232 Days
• Field of Search: 117 11, 117 13, 117 23- 24, 117 26, 117 30, 117 35, 117200, 117204, 117206, 117208-209, 117211, 117922, 117937, 117950
• CPC Class Codes: C30B 15/30 Mechanisms for rotating or moving either the melt or the crystal flotation methods C30B15/28
• CPC Class Codes: C30B 15/34 Edge-defined film-fed crystal-growth using dies or slits
• CPC Class Codes: C30B 29/20 Aluminium oxides
• CPC Class Codes: Y10T 117/1044 including means forming a flat shape [e.g., ribbon]
• CPC Class Codes: Y10T 428/2495 Thickness [relative or absolute]
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Abstract

Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Claims

1. A method of making a sapphire component, the method comprising machining a sapphire single crystal having a length, a width and a thickness, wherein the length>

width>

thickness, the width is not less than 28 cm, and the thickness is not less than 0.5 cm into the sapphire component.

2. The method of claim 1, wherein machining the sapphire single crystal comprises grinding the sapphire single crystal.

3. The method of claim 1, wherein machining the sapphire single crystal comprises lapping the sapphire single crystal.

4. The method of claim 1, wherein machining the sapphire single crystal comprises polishing the sapphire single crystal.

5. The method of claim 1, wherein machining the sapphire single crystal comprises removing bulk material from the sapphire single crystal.

6. The method of claim 1, wherein machining the sapphire single crystal comprises machining the sapphire single crystal into an optical component.

7. The method of claim 1, wherein machining the sapphire single crystal comprises machining the sapphire single crystal into an optical window.

8. The method of claim 7, wherein the optical window is machined into a geometric configuration for an infrared and laser guidance system, a military sensing and targeting system, or an infrared and visible wavelength vision system.

9. The method of claim 1, wherein the sapphire single crystal is transparent in the infrared and visible wavelength spectrums.

10. The method of claim 1, wherein the sapphire single crystal has a thickness of at least 0.6 cm.

11. A method of making a sapphire component comprising grinding, lapping, polishing or removing bulk material from a sapphire single crystal to form the sapphire component, wherein the sapphire single crystal has a length, a width and a thickness, the length>

width>

thickness, the width is not less than 28 cm, and the thickness is not less than 0.5 cm.

12. The method of claim 11 wherein the sapphire single crystal is formed into an optical component.

13. The method of claim 12, wherein the sapphire single crystal is formed into an optical window.

14. The method of claim 13 wherein the sapphire single crystal is formed into a geometric configuration for an infrared and laser guidance system.

15. The method of claim 13 wherein the sapphire single crystal is formed into a geometric configuration for a military sensing and targeting system.

16. The method of claim 13 wherein the sapphire single crystal is formed into a geometric configuration for an infrared and visible wavelength vision system.