MEMS electrostatic actuator device for RF varactor applications

• US 9,966,194 B2
• Filed: 12/20/2016
• Issued: 05/08/2018
• Est. Priority Date: 09/13/2011
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Gupta, Arun, McDonald, William C., Fruehling, Adam, Kmecko, Ivan, Barron, Lance, Agrawal, Divyanshu, Turner, Arthur M., Ehmke, John C.
• Primary Examiner(s): Doan, Theresa T
• Application Number:
  US15/385,431
• Publication Number:
  US 20170098509A1
• Time in Patent Office: 504 Days
• Field of Search: 257254, 257415
• CPC Class Codes: B81B 2201/016 having a bridge fixed on two ends and connected to one or more dimples
• CPC Class Codes: B81B 2201/0221 Variable capacitors
• CPC Class Codes: B81B 2203/0109 Bridges
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2203/0181 See-saws
• CPC Class Codes: B81B 2203/053 Translation according to an axis perpendicular to the substrate
• CPC Class Codes: B81B 2203/058 Rotation out of a plane parallel to the substrate
• CPC Class Codes: B81B 2203/06 Devices comprising elements which are movable in relation to each other, e.g. slidable or rotatable
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81B 3/0008 Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
• CPC Class Codes: B81B 3/001 Structures having a reduced contact area, e.g. with bumps or with a textured surface
• CPC Class Codes: B81B 3/0013 Structures dimensioned for mechanical prevention of stiction, e.g. spring with increased stiffness
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81B 7/008 MEMS characterised by an electronic circuit specially adapted for controlling or driving the same B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/00158 Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039
• CPC Class Codes: H01G 5/011 Electrodes
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes
• CPC Class Codes: H01G 5/40 : Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations

Abstract

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Claims

1. A MEMS electrostatic actuator device, comprising:

a CMOS wafer portion having CMOS circuitry;

a MEMS wafer portion bonded to the CMOS wafer portion, the MEMS wafer portion having an array of actuator elements formed thereon and a plurality of through-silicon-vias (TSVs) extending through the MEMS wafer portion; and

a plurality of ball bonds formed on a side of the MEMS wafer portion opposite the CMOS wafer portion, wherein an RF signal ball bond of the plurality of ball bonds is electrically connected through an RF signal TSV of the plurality of TSVs and an RF signal horizontal feeder bar to a plurality of RF signal lines, wherein the plurality of RF signal lines include one RF signal line extending through each column of the array of actuator elements.

2. The MEMS electrostatic actuator device of claim 1, further comprising a metal bond ring extending between the CMOS wafer portion and the MEMS wafer portion, the metal bond ring surrounding the array of actuator elements.

3. The MEMS electrostatic actuator device of claim 2, wherein a GND signal ball bond of the plurality of ball bonds is electrically connected through a GND TSV of the plurality of TSVs and the metal bond ring to the CMOS wafer portion to provide an RF grounding loop.

4. The MEMS electrostatic actuator device of claim 3, further comprising a ground shield on a side of the CMOS wafer portion facing the MEMS wafer portion, the ground shield extending over the entire array of actuator elements, wherein the ground shield is electrically connected to the metal bond ring and forms part of the RF grounding loop.

5. The MEMS electrostatic actuator device of claim 1, wherein the MEMS wafer portion includes a higher resistivity substrate relative to the CMOS wafer portion.

6. The MEMS electrostatic actuator device of claim 1, wherein the CMOS circuitry includes a serial interface controller, a decoder, a charge pump and a DC bias driver.

7. The MEMS electrostatic actuator device of claim 1, wherein the array of actuator elements are located in a hermetically sealed cavity.

8. The MEMS electrostatic actuator device of claim 1, wherein the plurality of ball bonds are arranged with all RF ball bonds on outside rows and a GND signal ball bond between adjacent RF ball bonds.

9. The MEMS electrostatic actuator device of claim 1, wherein each actuator element comprises:

a bottom plate having a first electrode for a first RF signal line and a second electrode for a second RF signal line;

a pedestal;

a top electrode connected to the pedestal, the top electrode having a center membrane portion that extends over the first RF signal line and the second RF signal line; and

a pair of cantilever hinges connected between the top electrode and an anchor on opposite ends of the center membrane portion, the pair of cantilever hinges allowing for movement of the center membrane portion closer to and further from the bottom plate.

10. The MEMS electrostatic actuator device of claim 9, wherein the top electrode has a pair of drive members extending from the center membrane on the opposite ends and wherein each actuator element further comprises a pair of drive out electrodes, each one of the pair of drive out electrodes extending under an associated one of the pair of drive members.

11. The MEMS electrostatic actuator device of claim 10, wherein each actuator element further includes a pull-in electrode between the first RF signal line and the second RF signal line.

12. A MEMS device, comprising:

a CMOS wafer portion having CMOS circuitry;

a MEMS wafer portion bonded to the CMOS wafer portion, the MEMS wafer portion having an array of elements formed thereon and a plurality of through-silicon-vias (TSVs) extending through the MEMS wafer portion; and

a plurality of ball bonds formed on a side of the MEMS wafer portion opposite the CMOS wafer portion, wherein an RF signal ball bond of the plurality of ball bonds is electrically connected through an RF signal TSV of the plurality of TSVs and an RF signal horizontal feeder bar to a plurality of RF signal lines, wherein the plurality of RF signal lines include one RF signal line extending through each column of the array of elements.

13. The MEMS device of claim 12, further comprising a metal bond ring extending between the CMOS wafer portion and the MEMS wafer portion, the metal bond ring surrounding the array of elements.

14. The MEMS device of claim 13, wherein a GND signal ball bond of the plurality of ball bonds is electrically connected through a GND TSV of the plurality of TSVs and the metal bond ring to the CMOS wafer portion to provide an RF grounding loop.

15. The MEMS device of claim 14, further comprising a ground shield on a side of the CMOS wafer portion facing the MEMS wafer portion, the ground shield extending over the entire array of elements, wherein the ground shield is electrically connected to the metal bond ring and forms part of the RF grounding loop.

16. The MEMS device of claim 12, wherein the CMOS circuitry includes a serial interface controller, a decoder, a charge pump and a DC bias driver.

17. The MEMS device of claim 12, wherein the array of elements are located in a hermetically sealed cavity.

18. The MEMS device of claim 12, wherein the plurality of ball bonds are arranged with all RF ball bonds on outside rows and a GND signal ball bond between adjacent RF ball bonds.

19. The MEMS device of claim 12, wherein each element comprises:

a bottom plate having a first electrode for a first RF signal line and a second electrode for a second RF signal line;

a pedestal;

a top electrode connected to the pedestal, the top electrode having a center membrane portion that extends over the first RF signal line and the second RF signal line; and

a pair of cantilever hinges connected between the top electrode and an anchor on opposite ends of the center membrane portion, the pair of cantilever hinges allowing for movement of the center membrane portion closer to and further from the bottom plate.