Device manufacture and packaging method thereof

• US 9,966,302 B2
• Filed: 02/03/2017
• Issued: 05/08/2018
• Est. Priority Date: 03/16/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Liu, Chien-Hsuan
• Primary Examiner(s): Clark, Jasmine
• Application Number:
  US15/424,245
• Publication Number:
  US 20170148666A1
• Time in Patent Office: 459 Days
• CPC Class Codes: H01L 21/0274 Photolithographic processes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 2221/1031 Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00

Abstract

Some embodiments of the present disclosure provide a semiconductive device. The semiconductive device includes a first conductive layer and a second conductive layer above the first conductive layer. The second conductive layer includes a first portion and a second portion protruding from the first portion. A via structure is under the second conductive layer and on top of the first conductive layer. The via structure is substantially aligned vertically with the second portion.

Claims

1. A semiconductive device, comprising:

a first conductive layer;

a second conductive layer above the first conductive layer, and the second conductive layer comprising;

a first portion; and

a second portion protruding from the first portion; and

a via structure under the second conductive layer and on top of the first conductive layer, and the via structure substantially aligned vertically with the second portion,

wherein the second conductive layer is an ultra-thick metal layer.

2. The semiconductive device of claim 1, wherein the first portion partially overlaps with the second portion.

3. The semiconductive device of claim 1, wherein the first portion of the second conductive layer comprises a curved boundary intersecting with the second portion.

4. The semiconductive device of claim 1, wherein the second conductive layer further comprises a third portion, and the third portion being distanced from the first portion by a predetermined value.

5. The semiconductive device of claim 1, wherein the via structure comprises a material substantially the same as the material of the second conductive layer.

6. The semiconductive device of claim 1, wherein the via structure is in contact with the first conductive layer.

7. The semiconductive device of claim 1, further comprising a protective layer over the first conductive layer and surrounding only a portion of the via structure in proximity to the first conductive layer.

8. A semiconductive device, comprising:

a first conductive layer;

a via structure on top of the first conductive layer, and the via structure comprising a lateral side;

a second conductive layer over the via structure, and the second conductive layer comprising;

a lateral boundary connected to the lateral side of the via structure such that a first portion of the lateral boundary is aligned vertically with the lateral side of the via structure; and

a protective layer over the first conductive layer and surrounding the via structure in proximity to the first conductive layer.

9. The semiconductive device of claim 8, wherein the first portion of the lateral boundary is substantially in contact with the lateral side.

10. The semiconductive device of claim 8, wherein the first portion of the lateral boundary comprises a protruding portion.

11. The semiconductive device of claim 8, wherein the second conductive layer comprises another region distanced from the first portion of the lateral boundary by a predetermined value.

12. The semiconductive device of claim 8, wherein the via structure comprises a conductive material similar to a material in the second conductive layer.

13. The semiconductive device of claim 8, wherein the lateral side of the via structure is in contact with the first conductive layer.

14. The semiconductive device of claim 8, wherein the protective layer comprises nitride materials.

15. A semiconductive structure, comprising:

a first conductive layer;

a second conductive layer above the first conductive layer, the second conductive layer comprising;

a body region, comprising;

a first portion; and

a second portion protruding from the first portion; and

a side region adjacent to the body region; and

a via structure under the second conductive layer and on top of the first conductive layer, and a via of the via structure substantially aligning vertically with the second portion,

wherein a minimal distance between the first portion and the side region is greater than a minimal distance between the second portion and the side region.

16. The semiconductive structure of claim 15, wherein the second conductive layer comprises a thickness greater than about 2 μ

m.

17. The semiconductive structure of claim 15, wherein a lateral side of the second portion is vertically aligned with a lateral side of the via of the via structure.

18. The semiconductive structure of claim 15, wherein the first portion of the second conductive layer comprises a curved boundary intersecting with the second portion.

19. The semiconductive structure of claim 15, wherein the second conductive layer further comprising a third portion protruding from the first portion.

20. The semiconductive structure of claim 19, wherein a lateral side of the third portion is vertically aligned with a lateral side of a via of the via structure.