Semiconductor devices for integration with light emitting chips and modules thereof
First Claim
1. A semiconductor device comprising:
- an active region disposed in a semiconductor substrate;
an uppermost metal level comprising metal lines, the uppermost metal level disposed over the semiconductor substrate;
contact pads disposed at a major surface of the semiconductor device, the contact pads coupled to the metal lines in the uppermost metal level;
an isolation region separating the contact pads disposed at the major surface, wherein adjacent contact pads are electrically isolated from one another by a portion of the isolation region; and
reflective structures disposed between the upper metal level and the contact pads, wherein each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pads.
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Abstract
A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. An isolation region separates the contact pads disposed at the major surface. Adjacent contact pads are electrically isolated from one another by a portion of the isolation region. Reflective structures are disposed between the upper metal level and the contact pads, where each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pad.
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Citations
18 Claims
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1. A semiconductor device comprising:
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an active region disposed in a semiconductor substrate; an uppermost metal level comprising metal lines, the uppermost metal level disposed over the semiconductor substrate; contact pads disposed at a major surface of the semiconductor device, the contact pads coupled to the metal lines in the uppermost metal level; an isolation region separating the contact pads disposed at the major surface, wherein adjacent contact pads are electrically isolated from one another by a portion of the isolation region; and reflective structures disposed between the upper metal level and the contact pads, wherein each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pads. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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an uppermost metal level comprising metal lines, the uppermost metal level disposed over a semiconductor substrate; contact pads disposed at a major surface of the semiconductor device, the contact pads coupled to the metal lines in the uppermost metal level; and light absorptive structures disposed between the upper metal level and the contact pads, wherein the light absorptive structures comprise an amorphous semiconductor material. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification