Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
First Claim
1. A method for producing an optoelectronic semiconductor component, the method comprising:
- providing a plurality of active regions configured to generate a primary radiation;
providing a suspension comprising a solvent and luminescent material particles of different types, the luminescent material particles being configured to convert the primary radiation into a secondary radiation, wherein luminescent material particles of a first type are disposed in a first layer that covers an outer surface of each active region of the plurality of active regions, and wherein the first layer has intermediate spaces between two adjacent active regions of the plurality of active regions, and wherein luminescent material particles of a second type different from the first type fill the intermediate spaces; and
electrophoretically depositing at least some of the luminescent material particles between active regions of the plurality of active regions,wherein a diameter of each luminescent material particle of a majority of the luminescent material particles, which are electrophoretically deposited, is smaller than a distance between two adjacent active regions of the plurality of active regions, and wherein different types of luminescent material particles are arranged in different layers.
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Abstract
An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.
20 Citations
16 Claims
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1. A method for producing an optoelectronic semiconductor component, the method comprising:
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providing a plurality of active regions configured to generate a primary radiation; providing a suspension comprising a solvent and luminescent material particles of different types, the luminescent material particles being configured to convert the primary radiation into a secondary radiation, wherein luminescent material particles of a first type are disposed in a first layer that covers an outer surface of each active region of the plurality of active regions, and wherein the first layer has intermediate spaces between two adjacent active regions of the plurality of active regions, and wherein luminescent material particles of a second type different from the first type fill the intermediate spaces; and electrophoretically depositing at least some of the luminescent material particles between active regions of the plurality of active regions, wherein a diameter of each luminescent material particle of a majority of the luminescent material particles, which are electrophoretically deposited, is smaller than a distance between two adjacent active regions of the plurality of active regions, and wherein different types of luminescent material particles are arranged in different layers. - View Dependent Claims (2, 3)
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4. An optoelectronic semiconductor component, the component comprising:
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a plurality of active regions configured to generate a primary radiation; and luminescent material particles of different types configured to convert the primary radiation into a secondary radiation of different wavelengths, wherein each active region of the plurality of active regions are arranged spaced apart from each other active region of the plurality of active regions, wherein each active region of the plurality of active regions has a main extension direction, wherein each active region of the plurality of active regions has a core region comprising a first semiconductor material, wherein each active region of the plurality of active regions comprises an active layer covering the core region at least in directions transverse to the main extension direction of the respective active region, wherein each active region of the plurality of active regions comprises a cover layer comprising a second semiconductor material and covering the active layer at least in the directions transverse to the main extension direction of the respective active region, wherein at least some of the luminescent material particles are arranged between active regions of the plurality of active regions, wherein a diameter of each luminescent material particle of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions of the plurality of active regions, wherein the different types of luminescent material particles are arranged in different layers; and wherein luminescent material particles of a first type are disposed in a first layer that covers an outer surface of each active region of the plurality of active regions, and wherein the first layer has intermediate spaces between two adjacent active regions of the plurality of active regions, and wherein luminescent material particles of a second type different from the first type fill the intermediate spaces. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An optoelectronic semiconductor component, the component comprising:
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a plurality of active regions configured to generate a primary radiation; and luminescent material particles of different types configured to convert the primary radiation into a secondary radiation of different wavelengths; wherein each active region of the plurality of active regions are arranged spaced apart from each other active region of the plurality of active regions; wherein each active region of the plurality of active regions has a main extension direction; wherein each active region of the plurality of active regions has a core region comprising a first semiconductor material; wherein each active region of the plurality of active regions comprises an active layer covering the core region at least in directions transverse to the main extension direction of the respective active region; wherein each active region of the plurality of active regions comprises a cover layer comprising a second semiconductor material and covering the active layer at least in the directions transverse to the main extension direction of the respective active region; wherein at least some of the luminescent material particles are arranged between active regions of the plurality of active regions; wherein a diameter of each luminescent material particle of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions of the plurality of active regions; wherein the different types of luminescent material particles are arranged in different layers; wherein luminescent material particles of a first type completely occupy each active region of the plurality of active regions and intermediate spaces between the plurality of active regions; and wherein luminescent material particles of a second type different from the first type are arranged as a layer on the luminescent material particles of the first type.
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16. A method for producing an optoelectronic semiconductor component, the method comprising:
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providing a plurality of active regions configured to generate a primary radiation; providing a suspension comprising a solvent and luminescent material particles of different types, the luminescent material particles being configured to convert the primary radiation into a secondary radiation; and electrophoretically depositing at least some of the luminescent material particles between active regions of the plurality of active regions; wherein a diameter of each luminescent material particle of a majority of the luminescent material particles, which are electrophoretically deposited, is smaller than a distance between two adjacent active regions of the plurality of active regions, wherein different types of luminescent material particles are arranged in different layers, wherein luminescent material particles of a first type completely occupy each active region of the plurality of active regions and intermediate spaces between the plurality of active regions, and wherein luminescent material particles of a second type different from the first type are arranged as a layer on the luminescent material particles of the first type.
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Specification