Light emitting diode component

• US 9,966,511 B2
• Filed: 04/17/2014
• Issued: 05/08/2018
• Est. Priority Date: 04/25/2013
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Koninklijke Philips N.V.
• Inventors: Lopez, Toni
• Primary Examiner(s): GHEYAS, SYED I
• Application Number:
  US14/786,947
• Publication Number:
  US 20160087171A1
• Time in Patent Office: 1,482 Days
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

The present invention relates to a light emitting diode component (101), comprising a light emitting semiconductor structure (104) having a top surface, and a micro-optical multilayer structure (102) arranged to guide light out from said light emitting semiconductor structure (104), said micro-optical multilayer structure (102) comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from said semiconductor structure (104), wherein a refractive index, n_i, of the i:th layer is greater than a refractive index, n_i+1, of the i+1:th layer, and wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer. The present invention also relates to a light emitting diode comprising such a light emitting diode component.

Claims

1. A light emitting diode component, comprising:

a light emitting semiconductor structure disposed on a growth substrate, the light emitting semiconductor structure having a top surface, and

a micro-optical multilayer structure arranged to guide light out from said top surface of the light emitting semiconductor structure, said micro-optical multilayer structure comprising a plurality of layers, wherein an i+1;

th layer is arranged on top an i;

th layer in a sequence as seen from said semiconductor structure, wherein a refractive index, n_i, of the i;

th layer is greater than a refractive index, n_i+1, of the i+1;

th layer wherein the value of i is selected from the set of positive integers, wherein a thickness of the i+1;

th layer is greater than a thickness of the i;

th layer, wherein the thicknesses of the i+1;

th layer and the i;

th layer are on the order of hundreds of microns, and wherein the growth substrate is disposed between the multilayer structure and the light emitting semiconductor structure.

2. The light emitting diode component, according to claim 1, wherein a thickness, as seen from said semiconductor structure, of the i:

th layer, t_i, is given by;

t_i=√

A/tan [sin ^(−

1)(n_(i+1)/n_i)]

wherein A is the top surface area of the micro-optical multilayer structure.

3. The light emitting diode component, according to claim 1, wherein a first layer, as seen from said semiconductor structure, of said micro-optical multilayer structure has a refractive index equal to the refractive index of a top region of said semiconductor structure.

4. The light emitting diode component, according to claim 1, further comprising a wavelength converting layer.

5. The light emitting diode component according to claim 4, wherein said micro-optical multilayer structure is arranged on top of said wavelength converting layer.

6. The light emitting diode component according to claim 4, wherein said micro-optical multilayer structure is arranged below said wavelength converting layer.

7. The light emitting diode component according to claim 4, further comprising an additional micro-optical multilayer structure, wherein said wavelength converting layer is arranged in-between said micro-optical multilayer structure and said additional micro-optical multilayer structure.

8. The light emitting diode component according to claim 4, wherein said wavelength converting layer comprises a phosphor material, a quantum dot, and/or a fluorescent dye.

9. The light emitting diode component, according to claim 8, wherein said phosphor material comprises one of a polycrystalline plate and Ce (III) doped gadolinium aluminium garnet (Y,GdAG:

Ce).

10. The light emitting diode component, according to claim 1, wherein the growth substrate is a sapphire substrate.

11. The light emitting diode component according to claim 1, further comprising a side layer arranged adjacent to a side surface of said semiconductor structure.

12. The light emitting diode component according to claim 11, wherein said side layer comprises a wavelength converting material, a phosphor material, a quantum dot, and/or a fluorescent dye.

13. The light emitting diode component according to claim 11, wherein said side layer comprises one of a light reflecting coating material, high reflectance metals, and high diffuse reflectance fluoropolymers.

14. A light emitting diode, LED, comprising said light emitting diode component according to claim 1, wherein said light emitting diode component is arranged on a sub-mount.

15. The light emitting diode component according to claim 1, wherein a surface area of the multilayer structure is substantially equal to a surface area of a top surface of the growth substrate.

16. The light emitting diode component according to claim 1, wherein a refractive index of a first layer of the multilayer structure deviates less than 10% from a refractive index of the growth substrate.

17. A light emitting diode component, comprising:

a light emitting semiconductor structure, and

a micro-optical multilayer structure arranged to guide light out from said top surface of the light emitting semiconductor structure, said micro-optical multilayer structure comprising a plurality of layers comprising an i+1;

th layer arranged on top an i;

th layer in a sequence as seen from said semiconductor structure, wherein a refractive index, n_i, of the i;

th layer is greater than a refractive index, n_i+1, of the i+1;

th layer wherein the value of i is selected from the set of positive integers, wherein a thickness of the i+1;

th layer is greater than a thickness of the i;

th layer, and wherein the thicknesses of the i+1;

th layer and the i;

th layer are on the order of hundreds of microns.

18. The light emitting diode component of claim 17 wherein the micro-optical multilayer structure is configured such that light exits a sidewall of the micro-optical multilayer structure.

19. The light emitting diode component of claim 17 wherein the micro-optical multilayer structure has a thickness on the order of millimeters.

20. The light emitting diode component of claim 17 further comprising a wavelength converting layer.

21. The light emitting diode component of claim 17 further comprising a side layer arranged adjacent to a side surface of said semiconductor structure.