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Integrated RF front end with stacked transistor switch

  • US 9,966,988 B2
  • Filed: 05/03/2017
  • Issued: 05/08/2018
  • Est. Priority Date: 06/23/2004
  • Status: Active Grant
First Claim
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1. An integrated RF Power Amplifier (PA) circuit, comprising:

  • a. an input node to accept an input signal with respect to a reference voltage Vref, the input node connected to a first gate of a first MOSFET, wherein a source of MOSFET is connected to Vref;

    b. one or more MOSFETs connected in series with the first MOSFET to form a transistor stack, wherein the first MOSFET comprises a bottom transistor of the transistor stack, and the one or more MOSFETs comprises a top transistor of the transistor stack, wherein the transistor stack is configured to control conduction between the reference voltage Vref and an output drive node, and wherein the output drive node is connected to a drain of the top transistor of the transistor stack; and

    c. one or more predominantly capacitive elements connected directly between a corresponding gate of the one or more MOSFETs and Vref.

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