MEMS packages and methods of manufacture thereof

• US 9,969,614 B2
• Filed: 05/29/2015
• Issued: 05/15/2018
• Est. Priority Date: 05/29/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Yee, Kuo-Chung
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US14/725,731
• Publication Number:
  US 20160347609A1
• Time in Patent Office: 1,082 Days
• Field of Search: 438 50- 53, 438406
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

Microelectromechanical systems (MEMS) packages and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a MEMS package may include attaching a MEMS structure having a capping structure thereon to a device wafer comprising a plurality of first devices formed therein to form a wafer level MEMS package; and singulating the device wafer having the MEMS structure attached thereto to form a plurality of chip scale MEMS packages.

Claims

1. A method of manufacturing a microelectromechanical systems (MEMS) package, the method comprising:

bonding a capping structure to a MEMS device to form a MEMS structure, wherein the capping structure comprises a substrate and an oxide layer, the substrate having a cavity disposed in a first surface thereof, wherein the oxide layer lines the cavity, and wherein the oxide layer is interposed between the substrate of the capping structure and the MEMS device;

attaching the MEMS structure to a device wafer comprising a plurality of first devices formed therein to form a wafer level MEMS package; and

singulating the device wafer having the MEMS structure attached thereto to form a plurality of chip scale MEMS packages.

2. The method of claim 1, wherein a first one of the plurality of chip scale MEMS packages comprises a first one of the plurality of first devices, and wherein a second one of the plurality of chip scale MEMS packages comprises a second one of the plurality of first devices.

3. The method of claim 1, wherein the MEMS structure comprises a MEMS wafer comprising a plurality of MEMS devices, and wherein the capping structure comprises a capping wafer comprising the substrate and the oxide layer, the capping wafer having a plurality of cavities lined by the oxide layer, each of the plurality of cavities disposed over a respective one of the plurality of MEMS devices.

4. The method of claim 3, wherein the singulating further comprises singulating the MEMS wafer and the capping wafer, wherein a first one of the plurality of chip scale MEMS packages comprises a first one of the plurality of MEMS devices, and wherein a second one of the plurality of chip scale MEMS packages comprises a second one of the plurality of MEMS devices.

5. The method of claim 1, wherein the attaching the MEMS structure to the device wafer comprises:

forming a plurality of inter-wafer connectors at standoff regions of the MEMS structure, the standoff regions extending from a major surface of the MEMS structure away from the capping structure; and

bonding the plurality of inter-wafer connectors to a metal feature of the device wafer.

6. The method of claim 5, wherein the bonding the plurality of inter-wafer connectors comprises a thermal compression bond (TCB) process.

7. The method of claim 1, wherein the MEMS device comprises a MEMS chip, and wherein the capping structure comprises a MEMS cap disposed on a surface of the MEMS chip.

8. The method of claim 7, wherein the attaching the MEMS structure to the device wafer comprises attaching the MEMS structure to the device wafer using an adhesive layer disposed between the MEMS structure and the device wafer.

9. The method of claim 8, wherein the MEMS structure is electrically coupled to the plurality of first devices by a plurality of wirebonds.

10. The method of claim 7, wherein the attaching the MEMS structure to the device wafer comprises bonding the MEMS cap to the device wafer using a plurality of inter-chip connectors disposed between the MEMS cap and the device wafer.

11. The method of claim 10, wherein the MEMS structure is electrically coupled to the plurality of first devices by one or more through-vias extending through the MEMS cap.

12. A method of manufacturing a microelectromechanical systems (MEMS) package, the method comprising:

bonding a capping structure to a MEMS device to form a MEMS structure, the capping structure having a cavity disposed therein, the cavity disposed over a sensing feature of the MEMS device;

forming standoff structures in the MEMS device of the MEMS structure, the standoff structures disposed at a surface of the MEMS structure opposite the capping structure;

forming openings in a device wafer comprising a plurality of first devices, wherein the openings are formed in a dielectric layer of the device wafer, wherein the openings expose a metal layer under the dielectric layer, wherein the device wafer is separate from the MEMS structure;

after forming the standoff structures and openings, aligning the standoff structures to the openings in the device wafer;

after aligning the standoff structures to the openings, coupling the standoff structures of the MEMS structure to the corresponding metal layer of the openings in the device wafer via corresponding inter-wafer connectors to form a wafer level MEMS package, wherein each of the corresponding inter-wafer connectors extends into a corresponding opening and physically contacts a corresponding standoff structure and a metal layer of the corresponding opening in the device wafer;

after the coupling, thinning the wafer level MEMS package to expose conductive features in the device wafer;

forming a first redistribution layer (RDL) at a surface of the thinned wafer level MEMS package, the first RDL electrically coupled to the exposed conductive features; and

singulating the wafer level MEMS package to form a plurality of chip scale MEMS packages.

13. The method of claim 12, wherein the MEMS structure and the capping structure comprises a MEMS chip and a MEMS cap disposed over the MEMS chip, respectively, and wherein the method further comprises encapsulating the MEMS chip and the MEMS cap in a first molding compound after the coupling and prior to the thinning.

14. The method of claim 12, further comprising:

prior to the singulating, coupling a plurality of second devices on a surface of the first RDL facing away from the device wafer; and

encapsulating the plurality of second devices in a second molding compound.

15. The method of claim 12, wherein a width of the MEMS structure and a width of the device wafer are in a range from about 8 inches to about 18 inches.

16. The method of claim 12, wherein a width of the MEMS structure is in a range from about 6 inches to about 12 inches, and wherein a width of the device wafer is in a range from about 8 inches to about 18 inches.

17. A microelectromechanical systems (MEMS) package, comprising:

a first device substrate comprising one or more first devices formed therein;

a MEMS structure having a capping structure thereon disposed at a first major surface of the first device substrate; and

a second device substrate comprising one or more second devices formed therein, the second device substrate disposed at a second major surface of the first device substrate, the second major surface opposite the first major surface, wherein the second device substrate comprises metal bumps formed at an active surface of the second device substrate, wherein the active surface of the second device faces away from the first device substrate, wherein the second device substrate is laterally encapsulated within a first molding compound wherein the first molding compound has a same lateral extent as the first device substrate,

wherein the MEMS structure comprises a plurality of standoff regions at the first major surface of the first device substrate, and wherein a sealing connector couples the standoff regions to the first device substrate and provides a sealed cavity between the MEMS structure and the first device substrate.

18. The MEMS package of claim 17, wherein the MEMS structure and the capping structure are encapsulated in a second molding compound.

19. The MEMS package of claim 17, further comprising a first redistribution layer (RDL) disposed between the first device substrate and the second device substrate and a second RDL disposed on the active surface of the second device substrate, wherein the one or more first devices and the one or more second devices are electrically coupled by the first RDL and the second RDL.

20. The MEMS package of claim 17, further comprising an adhesive layer coupling the first device substrate and the second device substrate to each other.