Atomic layer etching of tungsten for enhanced tungsten deposition fill
First Claim
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1. A method of filling features on a substrate, the method comprising:
- (a) depositing a first amount of a metal in a feature; and
(b) preferentially etching the deposited first amount of the metal at or near an opening of the feature relative to an interior region of the feature by(i) modifying a surface of the deposited first amount of the metal by exposing the metal to a halogen-containing gas, wherein the surface is modified preferentially at or near the opening of the feature relative to the interior region of the feature; and
(ii) exposing the modified surface to an activation gas to preferentially etch the metal at or near the opening of the feature relative to the interior region of the feature.
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Abstract
Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.
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Citations
19 Claims
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1. A method of filling features on a substrate, the method comprising:
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(a) depositing a first amount of a metal in a feature; and (b) preferentially etching the deposited first amount of the metal at or near an opening of the feature relative to an interior region of the feature by (i) modifying a surface of the deposited first amount of the metal by exposing the metal to a halogen-containing gas, wherein the surface is modified preferentially at or near the opening of the feature relative to the interior region of the feature; and (ii) exposing the modified surface to an activation gas to preferentially etch the metal at or near the opening of the feature relative to the interior region of the feature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of filling features on a substrate, the method comprising:
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(a) partially filling a feature with a first amount of tungsten; (b) preferentially etching the first amount of tungsten at or near an opening of the feature relative to an interior region of the feature by exposing the substrate to alternating pulses of a halogen-containing gas and an activation gas, wherein a pulse of the halogen-containing gas preferentially adsorbs to the first amount of tungsten at or near the opening of the feature relative to the interior region of the feature; and (c) after the preferentially etching, depositing a second amount of tungsten in the feature. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification