Atomic layer etching of tungsten for enhanced tungsten deposition fill

• US 9,972,504 B2
• Filed: 08/19/2015
• Issued: 05/15/2018
• Est. Priority Date: 08/07/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Lai, Chiukin Steven, Kanarik, Keren Jacobs, Tan, Samantha, Chandrashekar, Anand, Su, Teh-tien, Yang, Wenbing, Wood, Michael, Danek, Michal
• Primary Examiner(s): BRADLEY, STEPHEN M
• Application Number:
  US14/830,683
• Publication Number:
  US 20170040214A1
• Time in Patent Office: 1,000 Days
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

Claims

1. A method of filling features on a substrate, the method comprising:

(a) depositing a first amount of a metal in a feature; and

(b) preferentially etching the deposited first amount of the metal at or near an opening of the feature relative to an interior region of the feature by

(i) modifying a surface of the deposited first amount of the metal by exposing the metal to a halogen-containing gas, wherein the surface is modified preferentially at or near the opening of the feature relative to the interior region of the feature; and

(ii) exposing the modified surface to an activation gas to preferentially etch the metal at or near the opening of the feature relative to the interior region of the feature.

2. The method of claim 1, wherein the metal contains one of titanium, tantalum, nickel, cobalt, or molybdenum.

3. The method of claim 1, wherein the metal contains tungsten.

4. The method of claim 1, further comprising applying a bias during at least one of (i) and (ii).

5. The method of claim 4, wherein the bias is applied at a voltage less than the voltage at which the halogen-containing gas or the activation gas sputters the metal.

6. The method of claim 1, wherein (b) comprises a self-limiting reaction.

7. The method of claim 1, wherein the substrate comprises features having different size openings.

8. The method of claim 1, wherein (a) and (b) are performed without breaking vacuum.

9. The method of claim 1, further comprising igniting a plasma during at least one of (i) and (ii).

10. The method of claim 1, wherein the halogen-containing gas is selected from the group consisting of chlorine, bromine, iodine, sulfur hexafluoride, silicon tetrafluoride, boron trichloride, and combinations thereof.

11. The method of claim 9, wherein the plasma is ignited using power between about 0 W and about 1000 W.

12. The method of claim 4, wherein the bias is applied at a voltage less than about 80 Vb.

13. The method of claim 1, wherein the activation gas is selected from a group consisting of neon, krypton, and argon.

14. A method of filling features on a substrate, the method comprising:

(a) partially filling a feature with a first amount of tungsten;

(b) preferentially etching the first amount of tungsten at or near an opening of the feature relative to an interior region of the feature by exposing the substrate to alternating pulses of a halogen-containing gas and an activation gas, wherein a pulse of the halogen-containing gas preferentially adsorbs to the first amount of tungsten at or near the opening of the feature relative to the interior region of the feature; and

(c) after the preferentially etching, depositing a second amount of tungsten in the feature.

15. The method of claim 14, wherein a bias is applied during (b).

16. The method of claim 14, wherein a bias is applied during (b) at a voltage less than the voltage at which the halogen-containing gas or the activation gas sputters the first amount of tungsten.

17. The method of claim 14, wherein (a) and (b) are performed without breaking vacuum.

18. The method of claim 14, wherein at least one of the first amount of the tungsten and the second amount of the tungsten is deposited using a chlorine-containing tungsten precursor.

19. The method of claim 14, wherein at least one of the first amount of the tungsten and the second amount of the tungsten is fluorine-free tungsten.