Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures
First Claim
1. A semiconductor device, comprising:
- a cell field comprising a plurality of field electrode structures arranged in lines and cell mesas separating neighboring ones of the field electrode structures from each other, wherein each field electrode structure comprises a field electrode and a field dielectric separating the field electrode from a semiconductor body;
wherein the cell field comprises a functioning zone and a non-functioning zone, wherein the functioning zone comprises functional transistor cells comprising one or more of the plurality of field electrode structures, source zones of a first conductivity type and body zones of a second conductivity type that is complementary of the first conductivity type, and wherein the non-functioning zone comprises non-functional transistor cells comprising one or more of the plurality of field electrode structures wherein the cell mesas separating field electrode structures in non-functional transistor cells do not include a source zone of the first conductivity type;
a termination structure surrounding the cell field, extending from a first surface into the semiconductor body, and comprising a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body, the termination and field dielectrics having a same thickness; and
a termination mesa wider than the cell mesas and separating the termination structure from the non-functioning zone of the cell field,wherein the termination mesa touches both the non-functioning zone of the cell field and the termination structure.
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Accused Products
Abstract
A semiconductor device includes a cell field with a plurality of field electrode structures and cell mesas. The field electrode structures are arranged in lines. The cell mesas separate neighboring ones of the field electrode structures from each other. Each field electrode structure includes a field electrode and a field dielectric separating the field electrode from a semiconductor body. A termination structure surrounds the cell field, extends from a first surface into the semiconductor body, and includes a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body. The termination and field dielectrics have the same thickness. A termination mesa, which is wider than the cell mesas, separates the termination structure from the cell field.
6 Citations
15 Claims
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1. A semiconductor device, comprising:
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a cell field comprising a plurality of field electrode structures arranged in lines and cell mesas separating neighboring ones of the field electrode structures from each other, wherein each field electrode structure comprises a field electrode and a field dielectric separating the field electrode from a semiconductor body; wherein the cell field comprises a functioning zone and a non-functioning zone, wherein the functioning zone comprises functional transistor cells comprising one or more of the plurality of field electrode structures, source zones of a first conductivity type and body zones of a second conductivity type that is complementary of the first conductivity type, and wherein the non-functioning zone comprises non-functional transistor cells comprising one or more of the plurality of field electrode structures wherein the cell mesas separating field electrode structures in non-functional transistor cells do not include a source zone of the first conductivity type; a termination structure surrounding the cell field, extending from a first surface into the semiconductor body, and comprising a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body, the termination and field dielectrics having a same thickness; and a termination mesa wider than the cell mesas and separating the termination structure from the non-functioning zone of the cell field, wherein the termination mesa touches both the non-functioning zone of the cell field and the termination structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An electronic assembly, comprising:
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a semiconductor device that comprises a cell field comprising a plurality of field electrode structures arranged in lines and cell mesas separating neighboring ones of the field electrode structures from each other, wherein each field electrode structure comprises a field electrode and a field dielectric separating the field electrode from a semiconductor body; wherein the cell field comprises a functioning zone and a non-functioning zone, wherein the functioning zone comprises functional transistor cells comprising one or more of the plurality of field electrode structures, source zones of a first conductivity type and body zones of a second conductivity type that is complementary of the first conductivity type, and wherein the non-functioning zone comprises non-functional transistor cells comprising one or more of the plurality of field electrode structures wherein the cell mesas separating field electrode structures in non-functional transistor cells do not include a source zone of the first conductivity type; a termination structure surrounding the cell field, extending from a first surf ace into the semiconductor body, and comprising a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body, the termination and field dielectrics having a same thickness; and a termination mesa wider than the cell mesas and separating the termination structure from the non-functioning zone of the cell field, wherein the termination mesa touches both the non-functioning zone of the cell field and the termination structure.
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Specification