Thin-film semiconductor body with electronmagnetic radiation outcoupling structures
First Claim
1. A thin-film semiconductor body configured to emit electromagnetic radiation from a radiation exit face, comprising:
- a semiconductor layer sequence with an active zone configured to generate the electromagnetic radiation;
a carrier different from a growth substrate from which the semiconductor layer sequence is grown;
a reflective layer arranged between the carrier and the semiconductor layer sequence;
epitaxially formed pyramid-shaped outcoupling structures arranged at the radiation exit face; and
a refractive layer overlying the outcoupling structures, wherein the refractive layer adapts a refractive index between semiconductor material of the thin-film semiconductor body and a surrounding medium, wherein the refractive layer is formed from one of a refractive glass or from a silicone.
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Abstract
A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.
28 Citations
8 Claims
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1. A thin-film semiconductor body configured to emit electromagnetic radiation from a radiation exit face, comprising:
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a semiconductor layer sequence with an active zone configured to generate the electromagnetic radiation; a carrier different from a growth substrate from which the semiconductor layer sequence is grown; a reflective layer arranged between the carrier and the semiconductor layer sequence; epitaxially formed pyramid-shaped outcoupling structures arranged at the radiation exit face; and a refractive layer overlying the outcoupling structures, wherein the refractive layer adapts a refractive index between semiconductor material of the thin-film semiconductor body and a surrounding medium, wherein the refractive layer is formed from one of a refractive glass or from a silicone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification