Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs

• US 9,972,750 B2
• Filed: 12/10/2014
• Issued: 05/15/2018
• Est. Priority Date: 12/13/2013
• Status: Active Grant

• Current Assignee: GLO Technologies LLC
• Original Assignee: Glo AB (Shoei Electronic Materials, Inc.)
• Inventors: Herner, Scott Brad, Thompson, Daniel Bryce
• Primary Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US14/566,317
• Publication Number:
  US 20150171280A1
• Time in Patent Office: 1,252 Days
• Field of Search: None
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/891 Vapor phase deposition
• CPC Class Codes: Y10S 977/95 Electromagnetic energy

Abstract

Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200° C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.

Claims

1. A method of fabricating a light emitting diode (LED) device, comprising:

forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of the LED device;

depositing a layer of a dielectric material over, and directly on a top surface of at least a portion of the layer of the transparent, electrically conductive material, wherein the layer of the dielectric material has a transmissivity greater than 85% for at least one emission wavelength of the LED device; and

forming a metal contact directly on a top surface of the layer of the transparent, electrically conductive material layer, wherein the metal contact physically contacts a portion of a top surface of the layer of the dielectric material,

wherein depositing the layer of dielectric material comprises at least one of;

(a) depositing the layer using a chemical vapor deposition (CVD) process;

(b) depositing the layer at a temperature of 200°

C. or more; and

(c) depositing the layer using one or more chemically active precursors for the dielectric material,

wherein the dielectric material layer decreases a resistivity of the layer of transparent, electrically conductive material to a value that is 50% or less than the resistivity of the layer of transparent, electrically conductive material in the device without the dielectric material layer.

2. The method of claim 1, wherein depositing the layer of dielectric material comprises depositing the layer at a temperature of 200°

C. to 600°

C.

3. The method of claim 1, further comprising:

forming a plurality of first conductivity type semiconductor nanowire cores located over a support; and

forming a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores to form the LED device having a non-planar surface, wherein the layer of transparent conductive material is formed over the plurality of second conductivity type semiconductor shells.

4. The method of claim 1, wherein the layer of transparent, electrically conductive material comprises a transparent conductive oxide (TCO).

5. The method of claim 1, wherein the dielectric material comprises at least one of SiO₂, SiN and Al₂O₃.

6. The method of claim 1, wherein the layer of the dielectric material has an optical transmissivity greater than 90% for at least one emission wavelength of the LED device.

7. The method of claim 1, wherein depositing the layer of dielectric material comprises at least two of:

(a) depositing the layer using the chemical vapor deposition (CVD) process;

(b) depositing the layer at the temperature of 200°

C. or more; and

(c) depositing the layer using one or more chemically active precursors for the dielectric material.

8. The method of claim 1, wherein depositing the layer of dielectric material comprises all three of:

(a) depositing the layer using the chemical vapor deposition (CVD) process;

(b) depositing the layer at the temperature of 200°

C. or more; and

(c) depositing the layer using one or more chemically active precursors for the dielectric material.

12. The method of claim 1, wherein the layer of the dielectric material comprises a single SiO₂ layer which contacts the layer of transparent conductive material and the metal contact physically contacts the portion of the top surface of the single SiO₂ layer.

13. The method of claim 12, wherein the dielectric material decreases the resistivity of the transparent, electrically conductive material by optimizing a concentration of vacancies in the transparent, electrically conductive material.

14. The method of claim 1, further comprising:

forming a photoresist layer directly on a top surface of the layer of the dielectric material;

forming an opening through the layer of the dielectric material and through the photoresist layer, wherein the top surface of the layer of the transparent, electrically conductive material layer is physically exposed at a bottom of the opening;

depositing a metal inside the opening and over the photoresist layer; and

lifting off the photoresist layer, wherein a remaining portion of the deposited metal constitutes the metal contact.

15. The method of claim 1, wherein:

the LED device is formed on a buffer layer on a semiconductor substrate; and

the LED device comprises a plurality of nanowires.

16. The method of claim 12, wherein:

the transparent, electrically conductive material comprises an indium tin oxide layer;

the single SiO₂ layer is deposited by the CVD process at a temperature of 200°

C. to 600°

C. using SiH₄ and O₂ chemically active precursors at a pressure of 25 Torr or less; and

the single SiO₂ layer decreases the resistivity of the indium tin oxide layer by optimizing a concentration of vacancies in the indium tin oxide layer.

17. The method of claim 1, wherein:

the metal contact is formed after formation of the layer of the dielectric material; and

a portion of the dielectric material is removed to form the opening within the layer of the dielectric material; and

the metal contact is deposited directly on the entire sidewall of the opening within the layer of the dielectric material.

9. A method of fabricating a semiconductor device, comprising:

forming a layer of a transparent, electrically conductive material over at least a portion of the semiconductor device;

depositing a layer of a dielectric material over, and directly on a top surface of at least a portion of the layer of the transparent, electrically conductive material, wherein the layer of the dielectric material has a transmissivity greater than 85% for at least one emission wavelength of the LED device; and

forming a metal contact directly on a top surface of the layer of the transparent, electrically conductive material layer, wherein the metal contact physically contacts a portion of a top surface of the layer of the dielectric material,

wherein depositing the layer of dielectric material comprises at least one of;

(a) depositing the layer using a chemical vapor deposition (CVD) process;

(b) depositing the layer at a temperature of 200°

C. or more; and

(c) depositing the layer using one or more chemically active precursors for the dielectric material; and

wherein the dielectric material decreases a resistivity of the transparent, electrically conductive material to a value that is 50% or less of the resistivity of the transparent, electrically conductive material in the device without the dielectric material layer.

10. The method of claim 9, wherein the layer of the dielectric material comprises a single SiO₂ layer which contacts the layer of transparent conductive material and the metal contact physically contacts the portion of the top surface of the single SiO₂ layer.

11. The method of claim 10, wherein the dielectric material decreases the resistivity of the transparent, electrically conductive material by optimizing a concentration of vacancies in the transparent, electrically conductive material.

18. The method of claim 9, further comprising:

forming a photoresist layer directly on a top surface of the layer of the dielectric material;

forming an opening through the layer of the dielectric material and through the photoresist layer, wherein the top surface of the layer of the transparent, electrically conductive material layer is physically exposed at a bottom of the opening;

depositing a metal inside the opening and over the photoresist layer; and

lifting off the photoresist layer, wherein a remaining portion of the deposited metal constitutes the metal contact.

19. The method of claim 9, wherein:

the LED device is formed on a buffer layer on a semiconductor substrate; and

the LED device comprises a plurality of nanowires.

20. The method of claim 10, wherein:

the transparent, electrically conductive material comprises an indium tin oxide layer;

the single SiO₂ layer is deposited by the CVD process at a temperature of 200°

C. to 600°

C. using SiH₄ and O₂ chemically active precursors at a pressure of 25 Torr or less; and

the single SiO₂ layer decreases the resistivity of the indium tin oxide layer by optimizing a concentration of vacancies in the indium tin oxide layer.

21. The method of claim 9, wherein:

the metal contact is formed after formation of the layer of the dielectric material; and

a portion of the dielectric material is removed to form the opening within the layer of the dielectric material; and

the metal contact is deposited directly on the entire sidewall of the opening within the layer of the dielectric material.