Integrated photonics mode expander

• US 9,977,188 B2
• Filed: 02/23/2016
• Issued: 05/22/2018
• Est. Priority Date: 08/30/2011
• Status: Expired due to Fees

• Current Assignee: Skorpios Technologies Inc.
• Original Assignee: Skorpios Technologies Inc.
• Inventors: Lambert, Damien, Li, Guoliang, Zyskind, John, Krasulick, Stephen B.
• Primary Examiner(s): Stahl, Mike
• Application Number:
  US15/051,348
• Publication Number:
  US 20160170142A1
• Time in Patent Office: 819 Days
• Field of Search: None
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/12152 Mode converter
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: G02B 6/14 Mode converters
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide

Abstract

A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

Claims

1. A waveguide mode expander comprising:

a substrate;

a first cladding layer;

a metal layer that bonds the first cladding layer to the substrate;

a tapered shoulder portion, formed of a first layer of a high bandgap semiconductor material and disposed atop the first cladding layer, wherein;

the first layer defines a thickness;

the shoulder portion forms;

a length from an input end to an output end,

a first width at the input end, and

a second width that is larger than the first width, at the output end; and

a tapered ridge portion, overlying the shoulder portion and formed of one or more additional tapered portions of high bandgap semiconductor materials, wherein;

each of the additional portions is formed of an additional layer having an individual layer thickness;

each of the additional portions forms;

a sequentially shorter length than the length of the shoulder portion and the length of any underlying additional portions;

a first additional portion width at an end of the additional portion that is closest to the input end, and

a second additional portion width that is larger than the first additional portion width, at the output end;

such that the tapered ridge portion and the tapered shoulder portion are configured to expand an optical beam propagating through the waveguide mode expander from the input end to the output end.

2. The waveguide mode expander of claim 1, wherein:

the additional tapered portions form a plurality of stages stacked vertically on top of one other;

a first one of the stages is disposed atop the shoulder portion;

sequentially higher ones of the stages are stacked atop lower ones of the stages; and

at any given cross section of the waveguide mode expander;

the first one of the stages forms a narrower width than the shoulder portion; and

each higher stage of the plurality of stages forms a narrower width than lower ones of the stages.

3. The waveguide mode expander of claim 2, wherein:

the individual layer thicknesses of the stages increase sequentially from the first one of the stages through the sequentially higher ones of the stages.

4. The waveguide mode expander of claim 2, wherein the number of stages is three.

5. The waveguide mode expander of claim 2, wherein the number of stages is at least five.

6. The waveguide mode expander of claim 1, further comprising a second cladding layer deposited over the shoulder portion and the ridge portion.

7. The waveguide mode expander of claim 6, wherein at least one of the first and second cladding layers comprises SiO₂.

8. The waveguide mode expander of claim 1, wherein the ridge portion expands the optical beam by tapering from a narrower width at the input end to a wider width at the output end.

9. The waveguide mode expander of claim 1, wherein at least one of the shoulder portion and the one or more additional tapered portions comprises a compound semiconductor.

10. The waveguide mode expander of claim 1, wherein the ridge portion comprises one or more etch stop layers interspersed with the additional tapered portions.

11. The waveguide mode expander of claim 1, wherein the tapered ridge portion and the tapered shoulder portion expand the optical beam propagating through the waveguide mode expander both horizontally and vertically from the input end to the output end.

12. The waveguide mode expander of claim 1, wherein the tapered shoulder portion comprises silicon.

13. The waveguide mode expander of claim 12, wherein the tapered shoulder portion comprises crystalline silicon.

14. The waveguide mode expander of claim 12, wherein the tapered shoulder portion comprises polycrystalline silicon.

15. The waveguide mode expander of claim 12, wherein the tapered shoulder portion comprises amorphous silicon.

16. The waveguide mode expander of claim 1, wherein the tapered shoulder portion, the first cladding layer, and the metal layer are disposed atop a first region of the substrate, and further comprising:

a third cladding layer, a waveguide layer, and a fourth cladding layer disposed as successive layers atop a second region of the substrate.

17. The waveguide mode expander of claim 16, wherein a combined thickness of the first cladding layer and the metal layer matches a thickness of the third cladding layer, such that the shoulder portion aligns in height with the waveguide layer, above the substrate.

18. The waveguide mode expander of claim 16, wherein:

a height of an uppermost surface of the substrate in the first region is lower, by a recess depth, as compared to a height of an uppermost surface of the substrate in the second region; and

a combined thickness of the first cladding layer and the metal layer matches a thickness of the third cladding layer and the recess depth, such that the shoulder portion in the first region aligns in height with the waveguide layer in the second region.

19. The waveguide mode expander of claim 16, further comprising an index matching material disposed between the waveguide layer and the shoulder portion.

20. The waveguide mode expander of claim 19, further comprising SiO2 above the uppermost surface of the substrate in the second region, between the first cladding layer and the third cladding layer, and beneath the index matching material.