Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
First Claim
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1. A method for forming an epitaxial layer of semipolar gallium-nitride on a substrate, the method comprising:
- forming a conformal masking layer over a patterned surface of a patterned sapphire substrate;
depositing a resist over a portion of the masking layer by performing a shadow evaporation to deposit an evaporant;
etching regions of the masking layer that are not covered by the resist to expose crystal-growth surfaces on the patterned sapphire substrate; and
growing semipolar gallium-nitride from the crystal-growth surfaces.
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Abstract
Methods and structures for forming epitaxial layers of semipolar III-nitride materials on patterned sapphire substrates are described. Semi-nitrogen-polar GaN may be grown from inclined c-plane facets of sapphire and coalesced to form a continuous layer of (2021) GaN over the sapphire substrate. Nitridation of the sapphire and a low-temperature GaN buffer layer is used to form semi-nitrogen-polar GaN.
52 Citations
29 Claims
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1. A method for forming an epitaxial layer of semipolar gallium-nitride on a substrate, the method comprising:
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forming a conformal masking layer over a patterned surface of a patterned sapphire substrate; depositing a resist over a portion of the masking layer by performing a shadow evaporation to deposit an evaporant; etching regions of the masking layer that are not covered by the resist to expose crystal-growth surfaces on the patterned sapphire substrate; and growing semipolar gallium-nitride from the crystal-growth surfaces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18)
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17. A method for forming an epitaxial layer of semipolar gallium-nitride on a substrate, the method comprising:
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forming a conformal masking layer over a patterned surface of a patterned sapphire substrate; depositing a resist over a portion of the masking layer; etching regions of the masking layer that are not covered by the resist to expose crystal-growth surfaces on the patterned sapphire substrate; epitaxially growing semi-nitrogen-polar gallium-nitride from the crystal-growth surfaces; nitridizing the crystal-growth surfaces; growing a gallium-nitride buffer layer at a temperature below approximately 600°
C. prior to growing the semi-nitrogen-polar GaN, wherein growing a gallium-nitride buffer layer comprises;heating the substrate to between approximately 450°
C. and approximately 600°
C.;pressurizing a growth chamber to between approximately 100 mbar and approximately 250 mbar; flowing NH3 into the growth chamber at a rate between approximately 1 slm and approximately 4 slm; flowing trimethylgallium (TMGa) into the growth chamber at a rate between approximately 30 sccm and approximately 50 sccm; and growing the gallium-nitride buffer layer to a thickness between approximately 20 nm and approximately 100 nm. - View Dependent Claims (28, 29)
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19. A substrate comprising:
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a patterned sapphire substrate having a plurality of surfaces at different orientations and a masking layer formed over some of the surfaces; crystal-growth surfaces that are a portion of the plurality of surfaces and that are not covered by the masking layer; and epitaxial gallium-nitride formed adjacent the crystal-growth surfaces, wherein the patterned sapphire substrate has a (2243) facet approximately parallel to a process surface of the substrate and a c-plane facet approximately parallel to the crystal-growth surfaces. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification