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Method of forming low resistivity fluorine free tungsten film without nucleation

  • US 9,978,605 B2
  • Filed: 01/04/2017
  • Issued: 05/22/2018
  • Est. Priority Date: 05/27/2015
  • Status: Active Grant
First Claim
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1. A method of filling a feature comprising:

  • (a) providing a substrate in a chamber, the substrate comprising the feature having an untreated surface comprising a metal; and

    (b) without treating the untreated surface of the feature and without depositing a tungsten nucleation layer in the feature, exposing the untreated surface to cycles of alternating pulses of hydrogen and a chlorine-containing tungsten precursor introduced to the chamber to deposit bulk tungsten directly on the untreated surface.

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