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Wafer backside interconnect structure connected to TSVs

  • US 9,978,708 B2
  • Filed: 09/19/2016
  • Issued: 05/22/2018
  • Est. Priority Date: 09/22/2009
  • Status: Active Grant
First Claim
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1. A method for forming an integrated circuit structure, the method comprising:

  • forming a conductive via in a semiconductor substrate having an active device at a front surface, the semiconductor substrate further having a back surface opposite the front surface;

    exposing the conductive via at the back surface of the semiconductor substrate by reducing a thickness of the semiconductor substrate;

    after exposing the conductive via at the back surface of the semiconductor substrate, patterning an opening extending from the back surface of the semiconductor substrate into the semiconductor substrate;

    forming a first metal feature in the opening and contacting the conductive via; and

    forming a bump overlying and electrically connected to the first metal feature relative the back surface of the semiconductor substrate.

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