Light-emitting device and backlight module using the same

• US 9,978,718 B2
• Filed: 03/18/2016
• Issued: 05/22/2018
• Est. Priority Date: 03/18/2015
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Genesis Photonics Inc.
• Inventors: Hung, Cheng-Wei, Lin, Yu-Feng
• Primary Examiner(s): Cao, Phat X
• Application Number:
  US15/073,705
• Publication Number:
  US 20160276293A1
• Time in Patent Office: 795 Days
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/866 Zener diodes
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/18161 of a flip chip
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/48 : characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

Claims

1. A light-emitting device, comprising:

a substrate having a long side and a short side;

at least one electrode pad assembly disposed on the substrate, wherein the at least one electrode pad assembly comprises a first electrode pad and a second electrode pad;

at least one light-emitting element flipped on the substrate and having a light emitting diode and a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly;

a white reflective layer attached to a side surface of the light emitting diode and exposed the electrodes and a top surface of the light emitting diode; and

a phosphor layer at least disposed on the top surface of the light emitting diode;

wherein the first electrode pad and the second electrode pad are arranged along a direction parallel to the short side and the white reflective layer has a flat lateral surface, and a bottom surface of the white reflective layer is higher than bottom surfaces of the electrodes.

2. The light-emitting device according to claim 1, wherein each of the first electrode pad and the second electrode pad has a long side and a short side, the long side of the first electrode pad and the long side of the second electrode pad are parallel to the long side of the substrate, and the short side of the first electrode pad and the short side of the second electrode pad are parallel to the short side of the substrate.

3. The light-emitting device according to claim 1, wherein the substrate comprises:

an metal base layer;

an insulation layer disposed on the metal base layer;

a plurality of metal layers disposed on the insulation layer; and

a solder resist layer interposed between the copper-containing metal layers;

wherein the metal layers form the first electrode pad and the second electrode pad.

4. The light-emitting device according to claim 1, wherein the bottom surface of the white reflective layer is not lower than a bottom surface of the light emitting diode.

5. The light-emitting device according to claim 1, further comprising:

a dome-shaped sealing structure covering the at least one light-emitting element.

6. The light-emitting device according to claim 1, wherein the phosphor layer is disposed on the white reflective layer and has a flat lateral surface flush with the flat lateral surface of the white reflective layer.

7. The light-emitting device according to claim 1, wherein the phosphor layer comprises a high-density conversion layer and a low-density conversion layer, and the high-density conversion layer is interposed between the light-emitting diode and the low-density conversion layer.

8. The light-emitting device according to claim 7, wherein a ratio of a thickness of the low-density conversion layer to a thickness of the high-density conversion layer is between 1 and 100.

9. The light-emitting device according to claim 1, further comprising:

a filling structure infused between the substrate and the at least one light-emitting element.

10. The light-emitting device according to claim 1, further comprising a light transmissive layer disposed on the phosphor layer.

11. A backlight module, comprising:

a light guide plate having a light-incoming surface and a light-outgoing surface adjacent to the light-incoming surface;

a light-emitting device facing the light-incoming surface and comprising;

a substrate;

at least one electrode pad assembly disposed on the substrate, wherein the at least one electrode pad assembly comprises a first electrode pad and a second electrode pad;

at least one light-emitting element flipped on the substrate and having a light emitting diode and a plurality of electrodes connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly;

a white reflective layer attached to a side surface of the light emitting diode and exposed the electrodes and a top surface of the light emitting diode, wherein the white reflective layer has a flat lateral surface, and a bottom surface of the white reflective layer is higher than bottom surfaces of the electrodes; and

a phosphor layer at least disposed on the top surface of the light emitting diode; and

at least one reflective element attached to a side surface of the light guide plate opposite to the light-outgoing surface and reflecting lights emitted from the light-emitting device;

wherein the first electrode pad and the second electrode pad are arranged along a direction perpendicular to the light-outgoing surface.

12. The backlight module according to claim 11, wherein the substrate has a long side and a short side, and the first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

13. The backlight module according to claim 12, wherein each of the first electrode pad and the second electrode pad has a long side and a short side, the long side of the first electrode pad and the long side of the second electrode pad are parallel to the long side of the substrate, and the short side of the first electrode pad and the short side of the second electrode pad are parallel to the short side of the substrate.

14. The backlight module according to claim 11, wherein the substrate comprises:

an metal base layer;

an insulation layer disposed on the metal base layer;

a plurality of metal layers disposed on the insulation layer; and

a solder resist layer interposed between the metal layers;

wherein the metal layers form the first electrode pad and the second electrode pad.

15. The backlight module according to claim 11, wherein the bottom surface of the white reflective layer is not lower than a bottom surface of the light emitting diode.

16. The backlight module according to claim 11, wherein the light-emitting device further comprises:

a dome-shaped sealing structure covering the at least one light-emitting element.

17. The backlight module according to claim 11, wherein the phosphor layer is disposed on the white reflective layer and has a flat lateral surface flush with the flat lateral surface of the white reflective layer.

18. The backlight module according to claim 17, wherein the phosphor layer comprises a high-density conversion layer and a low-density conversion layer, and the high-density conversion layer is interposed between the at least one light-emitting element and the low-density conversion layer.

19. The backlight module according to claim 11, wherein the light-emitting device further comprises:

a filling structure infused between the substrate and the at least one light-emitting element.

20. The backlight module according to claim 11, wherein the light-emitting device further comprises a light transmissive layer disposed on the phosphor layer.