Method for manufacturing image sensor structure having wide contact

• US 9,978,805 B2
• Filed: 03/29/2017
• Issued: 05/22/2018
• Est. Priority Date: 10/30/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Tzu-Jui, Yaung, Dun-Nian, Liu, Jen-Cheng, Hsu, Tzu-Hsuan, Yamashita, Yuichiro
• Primary Examiner(s): Green, Telly
• Application Number:
  US15/472,814
• Publication Number:
  US 20170200763A1
• Time in Patent Office: 419 Days
• Field of Search: None
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14614 having a special gate structure
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

Methods for forming image sensor structures are provided. The method includes forming an isolation structure in a substrate and forming a first light sensing region and a second light sensing region. The method further includes forming a first gate structure and a second gate structure, and the first gate structure and the second gate structure are positioned at a front side of the substrate. The method further includes forming a first source/drain structure adjacent to the first gate structure and a second source/drain structure adjacent to the second gate structure and forming an interlayer dielectric layer over the front side of the substrate. The method further includes forming a contact trench through the interlayer dielectric layer and forming a contact in the contact trench.

Claims

1. A method for manufacturing an image sensor structure, comprising:

forming an isolation structure in a substrate to divide the substrate into a first region and a second region;

forming a first light sensing region in the first region and a second light sensing region in the second region;

forming a first gate structure over the first region and a second gate structure over the second region, wherein the first gate structure and the second gate structure are positioned at a front side of the substrate;

forming a first source/drain structure adjacent to the first gate structure and a second source/drain structure adjacent to the second gate structure;

forming an interlayer dielectric layer over the front side of the substrate to cover the first gate structure and the second gate structure;

forming a contact trench through the interlayer dielectric layer, such that a portion of the first source/drain structure, a portion of the second source/drain structure, and the isolation structure are exposed by the contact trench; and

forming a contact in the contact trench.

2. The method for manufacturing an image sensor structure as claimed in claim 1, wherein forming the isolation structure comprises:

forming an isolation trench in the substrate; and

depositing an isolation material in the isolation trench.

3. The method for manufacturing an image sensor structure as claimed in claim 2, wherein the isolation material comprises silicon nitride, silicon oxide, or polysilicon.

4. The method for manufacturing an image sensor structure as claimed in claim 1, further comprising:

forming a first hard mask structure over the first gate structure,

wherein a portion of the first hard mask structure is exposed by the contact trench.

5. The method for manufacturing an image sensor structure as claimed in claim 4, wherein a portion of the contact is overlapped with a portion of the first gate structure and is separated from the first gate structure by the first hard mask structure.

6. The method for manufacturing an image sensor structure as claimed in claim 1, further comprising:

forming an interconnect structure over the interlayer dielectric layer; and

forming a color filter layer over a back side of the substrate.

7. The method for manufacturing an image sensor structure as claimed in claim 1, further comprising:

polishing the substrate from its back side until the first light sensing region and the second light sensing region are exposed.

8. The method for manufacturing an image sensor structure as claimed in claim 1, wherein the isolation structure extends from the front side of the substrate to a back side of the substrate.

9. A method for manufacturing an image sensor structure, comprising:

forming an isolation structure in a substrate;

forming a first light sensing region and a second light sensing region at opposite sides of the isolation structure;

forming a first source/drain structure and a second source/drain structure at opposite sides of the isolation structure;

forming an interlayer dielectric layer over the substrate to cover the first source/drain structure and the second source/drain structure;

forming a contact trench through the interlayer dielectric layer, such that a portion of the first source/drain structure, a portion of the second source/drain structure, and the isolation structure are exposed by the contact trench; and

forming a contact in the contact trench.

10. The method for manufacturing an image sensor structure as claimed in claim 9, wherein the isolation structure comprises silicon nitride, silicon oxide, or polysilicon.

11. The method for manufacturing an image sensor structure as claimed in claim 9, further comprising:

forming a first gate structure adjacent to the first source/drain structure and a second gate structure adjacent to the second source/drain structure.

12. The method for manufacturing an image sensor structure as claimed in claim 11, wherein a portion of the contact overlaps with a portion of the first gate structure.

13. The method for manufacturing an image sensor structure as claimed in claim 12, wherein the contact and the first gate structure are separated by a hard mask structure.

14. The method for manufacturing an image sensor structure as claimed in claim 9, further comprising:

forming an interconnect structure over the interlayer dielectric layer; and

forming a color filter layer over a back side of the substrate.

15. The method for manufacturing an image sensor structure as claimed in claim 9, wherein the isolation structure extends from the front side of the substrate to a back side of the substrate.

16. A method for manufacturing an image sensor structure, comprising:

forming an isolation trench in a substrate;

forming an isolation structure in the isolation trench;

forming a first light sensing region and a second light sensing region at opposite sides of the isolation structure;

forming a first source/drain structure and a second source/drain structure at opposite sides of the isolation structure; and

forming a contact over a portion of the first source/drain structure, a portion of the second source/drain structure, and the isolation structure.

17. The method for manufacturing an image sensor structure as claimed in claim 16, further comprising:

forming a first gate structure adjacent to the first source/drain structure and a second gate structure adjacent to the second source/drain structure.

18. The method for manufacturing an image sensor structure as claimed in claim 16, further comprising:

forming an interlayer dielectric layer over a front side of the substrate, wherein the contact passes through the interlayer dielectric layer;

forming an interconnect structure over the interlayer dielectric layer; and

forming a color filter layer over a back side of the substrate.

19. The method for manufacturing an image sensor structure as claimed in claim 16, further comprising:

polishing the substrate from its back side until the first light sensing region and the second light sensing region are exposed.

20. The method for manufacturing an image sensor structure as claimed in claim 16, further comprising:

forming a color filter layer over a back side of the substrate,

wherein the contact is formed over a front side of the substrate.