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Indium gallium nitride light emitting devices

  • US 9,978,904 B2
  • Filed: 10/15/2013
  • Issued: 05/22/2018
  • Est. Priority Date: 10/16/2012
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting device comprising:

  • providing a first substrate having a crystallographic orientation within about 5 degrees of a −

    c-plane, the first substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single layer having a top surface of wurtzite GaN;

    fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride such that said InGaN epitaxial layer directly contacts said top surface, wherein said InGaN epitaxial layer has a thickness greater than 4 μ

    m and comprises an InN mole fraction greater than 0.5%, wherein the InGaN epitaxial layer is relaxed, having a-axis and c-axis lattice constants within 0.1% of the respective equilibrium lattice constants for a specific indium-containing nitride composition; and

    growing an optoelectronic device structure on one of the InGaN template or a derivative of the InGaN template.

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