Indium gallium nitride light emitting devices

• US 9,978,904 B2
• Filed: 10/15/2013
• Issued: 05/22/2018
• Est. Priority Date: 10/16/2012
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Krames, Michael R., D'Evelyn, Mark P., Koukitu, Akinori, Kumagai, Yoshinao, Murakami, Hisashi
• Primary Examiner(s): Le, Thao X
• Assistant Examiner(s): CROSS, XIA L
• Application Number:
  US14/054,234
• Publication Number:
  US 20140103356A1
• Time in Patent Office: 1,680 Days
• Field of Search: 257 9, 438 46
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Claims

1. A method of fabricating a light emitting device comprising:

providing a first substrate having a crystallographic orientation within about 5 degrees of a −

c-plane, the first substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single layer having a top surface of wurtzite GaN;

fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride such that said InGaN epitaxial layer directly contacts said top surface, wherein said InGaN epitaxial layer has a thickness greater than 4 μ

m and comprises an InN mole fraction greater than 0.5%, wherein the InGaN epitaxial layer is relaxed, having a-axis and c-axis lattice constants within 0.1% of the respective equilibrium lattice constants for a specific indium-containing nitride composition; and

growing an optoelectronic device structure on one of the InGaN template or a derivative of the InGaN template.

2. The method of claim 1, wherein the growing of the InGaN epitaxial layer is characterized by a crystallographic orientation that is miscut from said −

c-plane.

3. The method of claim 2, wherein said crystallographic orientation is miscut from N-face by between about 0.1 and about 10 degrees toward an m-plane.

4. The method of claim 1, wherein the bulk GaN is substantially indium-free.

5. The method of claim 1, wherein growing the InGaN epitaxial layer having the selected InN composition on the first substrate is performed by growing a series of graded InGaN epitaxial layers, wherein each graded InGaN epitaxial layer comprises an increasing InN mole fraction.

6. The method of claim 1, wherein growing the InGaN epitaxial layer having the selected InN composition on the first substrate is performed by growing a layer having a continuously-graded InN composition.

7. The method of claim 1, further comprising separating the InGaN layer having the selected InN composition from the first substrate to form a free-standing InGaN crystal.

8. The method of claim 7, further comprising utilizing the free-standing InGaN crystal as a seed for bulk crystal growth.

9. The method of claim 1, further comprising incorporating the optoelectronic device structure into a light emitting diode or a laser diode.

10. The method of claim 9, further comprising incorporating the light emitting diode or the laser diode into at least one of, a lamp, a luminaire, and a lighting system.

11. The method of claim 1, wherein the InGaN epitaxial layer is characterized by a single (−

1-14) x-ray diffraction peak within a reciprocal space map.

12. The method of claim 1, wherein the optoelectronic device structure is grown directly on one of the InGaN template or a derivative of the InGaN template.

13. The method of claim 1, wherein the derivative of the InGaN template is a free-standing InGaN crystal or wafer formed from the InGaN template.

14. The method of claim 1, wherein the derivative of the InGaN template is a free-standing InGaN crystal or wafer formed from a process wherein the InGaN template or a portion thereof is used as a seed for bulk crystal growth.

15. A method of fabricating a light emitting device comprising:

providing a first substrate having a crystallographic orientation within about 5 degrees of a −

c-plane, the first substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single layer having a top surface;

fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride substrate such that said InGaN epitaxial layer directly contacts said top surface, wherein the InGaN epitaxial layer has a thickness greater than 4 μ

m and comprises an InN mole fraction greater than 0.5%;

growing an optoelectronic device structure on a second substrate selected from one of the InGaN template and a derivative of the InGaN template; and

wherein the InGaN epitaxial layer is relaxed, having a-axis and c-axis lattice constants within 0.1% of the respective equilibrium lattice constants for a specific indium-containing nitride composition.

16. The method of claim 15, wherein the top surface comprises wurtzite GaN.

17. A light emitting device made from a process comprising:

providing a first substrate having a crystallographic orientation within about 5 degrees of a −

c-plane, the first substrate comprising a bulk gallium nitride substrate, wherein the bulk gallium nitride substrate is a single layer having a top surface;

fabricating an InGaN template by growing an InGaN epitaxial layer having a selected InN composition by hydride vapor phase epitaxy on said bulk gallium nitride substrate such that said InGaN epitaxial layer directly contacts said top surface, wherein the InGaN epitaxial layer has a thickness greater than 4 μ

m and comprises an InN mole fraction greater than 0.5%;

growing an optoelectronic device structure on a second substrate selected from one of the InGaN template and a derivative of the InGaN template; and

wherein the InGaN epitaxial layer is relaxed, having a-axis and c-axis lattice constants within 0.1% of the respective equilibrium lattice constants for a specific indium-containing nitride composition.

18. The light emitting device of claim 17, wherein the top surface comprises wurtzite GaN.