Spin electronic memory, information recording method and information reproducing method
First Claim
1. A method for recording information using a spin electronic memory, the method comprising applying voltage having voltage values staged into n stages to n recording layers laminated, the voltage values being necessary for accumulating a spin in a saturated state in each of the recording layers, where n is an integer of at least 1 or more,wherein the spin electronic memory comprises:
- a pair of electrodes;
a recording layer disposed between the electrodes, the recording layer being formed by laminating a first alloy layer and a second alloy layer, the first alloy layer being formed to contain any one of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe, and Bi2Se3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer being formed to contain an alloy expressed by a following general formula (1) as a principal component; and
a spin injection layer formed with a magnetic material and configured to inject a spin into the recording layer with the magnetic material being magnetized,
M1-xTex
(1)where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.
1 Assignment
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Accused Products
Abstract
A spin electronic memory of the present invention includes: a pair of electrodes 1, 2, recording layers 6a, 6b, and 6c between the electrodes 1 and 2, the recording layer being formed by laminating first alloy layer 5 and second alloy layer 4, the first alloy layer 5 being formed to contain any one of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe, and Bi2Se3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer 4 being formed to contain an alloy expressed by general formula (1) as a principal component; and spin injection layer 7 formed with a magnetic material to inject a spin into the recording layer with the magnetic material being magnetized,
M1-xTex (1)
- where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.
5 Citations
14 Claims
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1. A method for recording information using a spin electronic memory, the method comprising applying voltage having voltage values staged into n stages to n recording layers laminated, the voltage values being necessary for accumulating a spin in a saturated state in each of the recording layers, where n is an integer of at least 1 or more,
wherein the spin electronic memory comprises: -
a pair of electrodes; a recording layer disposed between the electrodes, the recording layer being formed by laminating a first alloy layer and a second alloy layer, the first alloy layer being formed to contain any one of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe, and Bi2Se3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer being formed to contain an alloy expressed by a following general formula (1) as a principal component; and a spin injection layer formed with a magnetic material and configured to inject a spin into the recording layer with the magnetic material being magnetized,
M1-xTex
(1)where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.
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2. The method for recording information according to claim 1, wherein
the first alloy layer has a hexagonal crystal structure, and the second alloy layer has a cubic crystal structure, and a c-axis of the first alloy layer is oriented in a laminating direction, and a (111) plane of the second alloy layer is oriented along an adjacent surface adjacent to the first alloy layer.
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3. The method for recording information according to claim 1, wherein the second alloy layer is formed to contain GeTe as a principal component.
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4. The method for recording information according to claim 1, wherein the second alloy layer has a thickness of more than 0 and 4 nm or less.
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5. The method for recording information according to claim 1, further comprising
an orientation layer disposed as a base of the second alloy layer to orient a lamination plane of the second alloy layer laminated thereon along a (111) plane.
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6. The method for recording information according to claim 5, wherein the orientation layer has a composition and a crystal structure identical to those of the first alloy layer.
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7. The method for recording information according to claim 1, further comprising
a magnetic section configured to form a magnetic field in a direction perpendicular to a plane of the spin injection layer to inject a spin into the recording layer through the spin injection layer.
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8. A method for reproducing information using a spin electronic memory, the method comprising measuring a status value of one of a resistance value and an optical reflectance of n recording layers laminated, and determining, based on the status value, number of the recording layers having information recorded thereon in the recording layers laminated, where n is an integer of at least 1 or more,
wherein the spin electronic memory comprises: -
a pair of electrodes; a recording layer disposed between the electrodes, the recording layer being formed by laminating a first alloy layer and a second alloy layer, the first alloy layer being formed to contain any one of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe, and Bi2Se3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer being formed to contain an alloy expressed by a following general formula (1) as a principal component; and a spin injection layer formed with a magnetic material and configured to inject a spin into the recording layer with the magnetic material being magnetized,
M1-xTex
(1)where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.
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9. The method for reproducing information according to claim 8, wherein
the first alloy layer has a hexagonal crystal structure, and the second alloy layer has a cubic crystal structure, and a c-axis of the first alloy layer is oriented in a laminating direction, and a (111) plane of the second alloy layer is oriented along an adjacent surface adjacent to the first alloy layer.
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10. The method for reproducing information according to claim 8, wherein
the second alloy layer is formed to contain GeTe as a principal component.
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11. The method for reproducing information according to claim 8, wherein
the second alloy layer has a thickness of more than 0 and 4 nm or less.
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12. The method for reproducing information according to claim 8, further comprising
an orientation layer disposed as a base of the second alloy layer to orient a lamination plane of the second alloy layer laminated thereon along a (111) plane.
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13. The method for reproducing information according to claim 12, wherein
the orientation layer has a composition and a crystal structure identical to those of the first alloy layer.
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14. The method for reproducing information according to claim 8, further comprising
a magnetic section configured to form a magnetic field in a direction perpendicular to a plane of the spin injection layer to inject a spin into the recording layer through the spin injection layer.
Specification