Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
First Claim
1. A method of fabricating a semiconductor device, the method comprising:
- forming a first semiconductor layer of a first conductivity type;
forming a second semiconductor layer on the first semiconductor layer;
implanting ions into the second semiconductor layer to form an implanted region comprising a distribution of implanted dopants having an implanted dopant concentration comprising a substantially uniform concentration of at least about 5×
1020 ions/cm3 that extends at least about 1000 Angstroms from a first depth within the implanted region to a second depth within the implanted region, wherein the substantially uniform concentration is a result of first, second, and third implantations; and
forming a first electrode on the implanted region of the second semiconductor layer,wherein forming the first semiconductor layer comprises forming the first semiconductor layer to have a first dopant concentration,wherein forming the second semiconductor layer comprises forming the second semiconductor layer to have a second dopant concentration that is less than the first dopant concentration, andwherein the method further comprises forming a second electrode on a non-implanted region of the second semiconductor layer that is spaced apart from the implanted region.
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Abstract
Methods of fabricating a semiconductor device include forming a first semiconductor layer of a first conductivity type and having a first dopant concentration, and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer has a second dopant concentration that is less than the first dopant concentration. Ions are implanted into the second semiconductor layer to form an implanted region of the first conductivity type extending through the second semiconductor layer to contact the first semiconductor layer. A first electrode is formed on the implanted region of the second semiconductor layer, and a second electrode is formed on a non-implanted region of the second semiconductor layer. Related devices are also discussed.
180 Citations
24 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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forming a first semiconductor layer of a first conductivity type; forming a second semiconductor layer on the first semiconductor layer; implanting ions into the second semiconductor layer to form an implanted region comprising a distribution of implanted dopants having an implanted dopant concentration comprising a substantially uniform concentration of at least about 5×
1020 ions/cm3 that extends at least about 1000 Angstroms from a first depth within the implanted region to a second depth within the implanted region, wherein the substantially uniform concentration is a result of first, second, and third implantations; andforming a first electrode on the implanted region of the second semiconductor layer, wherein forming the first semiconductor layer comprises forming the first semiconductor layer to have a first dopant concentration, wherein forming the second semiconductor layer comprises forming the second semiconductor layer to have a second dopant concentration that is less than the first dopant concentration, and wherein the method further comprises forming a second electrode on a non-implanted region of the second semiconductor layer that is spaced apart from the implanted region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of fabricating a semiconductor device, the method comprising:
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forming a first semiconductor layer of a first conductivity type and having a first dopant concentration; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a second dopant concentration that is less than the first dopant concentration; implanting ions into the second semiconductor layer to form an implanted region of the first conductivity type extending through the second semiconductor layer to contact the first semiconductor layer, and to provide a distribution of implanted dopants having a substantially uniform concentration that extends at least about 1000 Angstroms from a first depth within the implanted region to a second depth within the implanted region; forming a first electrode on the implanted region of the second semiconductor layer; and forming a second electrode on a non-implanted region of the second semiconductor layer that is spaced apart from the implanted region, wherein the substantially uniform concentration results from; implanting ions of the first conductivity type at a first dose and at a first implantation energy;
thenimplanting ions of the first conductivity type at a second dose and at a second implantation energy; and implanting ions of the first conductivity type at a third dose and at a third implantation energy, and wherein the third dose comprises about 0.5×
1015to about 3.7×
1015 ions/cm2.
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22. A method of fabricating a semiconductor device, the method comprising:
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forming a first semiconductor layer of a first conductivity type; forming a second semiconductor layer on the first semiconductor layer; implanting ions into the second semiconductor layer to form an implanted region of the first conductivity type extending through the second semiconductor layer to contact the first semiconductor layer, wherein implanting the ions comprises; implanting ions of the first conductivity type at a first dose and at a first implantation energy;
thenimplanting ions of the first conductivity type at a second dose and at a second implantation energy; and
thenimplanting ions of the first conductivity type at a third dose and at a third implantation energy, wherein the first, second, and third implantation energies result in a substantially uniform implanted dopant concentration that extends at least about 1000Angstroms from a first depth within the implanted region to a second depth within the implanted region; forming a first electrode on the implanted region of the second semiconductor layer; and forming a second electrode on a non-implanted region of the second semiconductor layer that is spaced apart from the implanted region, wherein forming the first semiconductor layer comprises forming the first semiconductor layer to have a first dopant concentration, and wherein forming the second semiconductor layer comprises forming the second semiconductor layer to have a second dopant concentration that is less than the first dopant concentration. - View Dependent Claims (23, 24)
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Specification