Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
First Claim
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1. A method of forming a semiconductor structure, comprising:
- providing an insulation layer on a semiconductor layer;
depositing a cesium ion source on the insulation layer; and
diffusing cesium ions from the cesium ion source into the insulation layer,wherein diffusing the cesium ions from the cesium ion source into the insulation layer comprises annealing the insulation layer,wherein depositing the cesium ion source on the insulation layer comprises boiling the insulation layer in a CsCl solution,wherein providing the insulation layer on the semiconductor layer comprises forming and/or annealing the insulation layer in an environment containing nitrogen to nitridate the insulation layer and provide a nitridated insulation layer before depositing the cesium ion source on the insulation layer,wherein diffusing the cesium ions from the cesium ion source into the insulation layer comprises diffusing cesium ions into the nitridated insulation layer, andwherein, responsive to diffusing the cesium ions from the cesium ion source into the nitridated insulation layer, the semiconductor structure has a channel mobility of at least 40 cm2/V-s at an applied electric field of 3 MV/cm.
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Abstract
Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.
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Citations
16 Claims
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1. A method of forming a semiconductor structure, comprising:
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providing an insulation layer on a semiconductor layer; depositing a cesium ion source on the insulation layer; and diffusing cesium ions from the cesium ion source into the insulation layer, wherein diffusing the cesium ions from the cesium ion source into the insulation layer comprises annealing the insulation layer, wherein depositing the cesium ion source on the insulation layer comprises boiling the insulation layer in a CsCl solution, wherein providing the insulation layer on the semiconductor layer comprises forming and/or annealing the insulation layer in an environment containing nitrogen to nitridate the insulation layer and provide a nitridated insulation layer before depositing the cesium ion source on the insulation layer, wherein diffusing the cesium ions from the cesium ion source into the insulation layer comprises diffusing cesium ions into the nitridated insulation layer, and wherein, responsive to diffusing the cesium ions from the cesium ion source into the nitridated insulation layer, the semiconductor structure has a channel mobility of at least 40 cm2/V-s at an applied electric field of 3 MV/cm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a field effect transistor device, comprising:
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providing a semiconductor layer; forming spaced apart source and drain regions in the semiconductor layer, the source and drain regions defining a channel region in the semiconductor layer; providing an insulation layer on the semiconductor layer over the channel region; depositing a cesium ion source on the insulation layer; diffusing cesium ions from the cesium ion source into the insulation layer; forming a gate electrode on the insulation layer; and forming a contact on the source and drain regions, wherein diffusing the cesium ions from the cesium ion source into the insulation layer comprises annealing the insulation layer, wherein depositing the cesium ion source on the insulation layer comprises boiling the insulation layer in a CsCl solution, wherein providing the insulation layer on the semiconductor layer over the channel region comprises forming and/or annealing the insulation layer in an environment containing nitrogen to nitridate the insulation layer and provide a nitridated insulation layer before depositing the cesium ion source on the insulation layer, wherein diffusing the cesium ions from the cesium ion source into the insulation layer comprises diffusing cesium ions into the nitridated insulation layer, and wherein, responsive to diffusing the cesium ions from the cesium ion source into the nitridated insulation layer, the channel region has a channel mobility of at least 40 cm2/V-s at an applied electric field of 3 MV/cm. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification